Samsung M393B1K70CH0-CH9 8GB vs Gloway International Co. Ltd. TYA4U2666D19081C 8GB

总分

Samsung M393B1K70CH0-CH9 8GB

Samsung M393B1K70CH0-CH9 8GB

总分

Gloway International Co. Ltd. TYA4U2666D19081C 8GB

Gloway International Co. Ltd. TYA4U2666D19081C 8GB

差异规格评论

差异

Samsung M393B1K70CH0-CH9 8GB

需要考虑的原因
Samsung M393B1K70CH0-CH9 8GB

报告一个错误

Gloway International Co. Ltd. TYA4U2666D19081C 8GB

需要考虑的原因
Gloway International Co. Ltd. TYA4U2666D19081C 8GB

报告一个错误

低于PassMark测试中的延时，ns

40 44

左右 -10% 更低的延时
更快的读取速度，GB/s

13.5 11.2

测试中的平均数值
更快的写入速度，GB/s

9.5 8.1

测试中的平均数值
更高的内存带宽，mbps

21300 10600

左右 2.01 更高的带宽

规格

完整的技术规格清单

Samsung M393B1K70CH0-CH9 8GB

Gloway International Co. Ltd. TYA4U2666D19081C 8GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

44 40
读取速度，GB/s

11.2 13.5
写入速度，GB/s

8.1 9.5
内存带宽，mbps

10600 21300

Other

描述

PC3-10600, 1.5V, CAS Supported: 6 7 8 9 PC4-21300, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20
时序/时钟速度

7-7-7-20 / 1333 MHz 17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
排名PassMark (越多越好)

2293 2254

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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Kingston 9905712-010.A00G 16GB

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Samsung M3 78T5663EH3-CF7 2GB

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Corsair CMU32GX4M2D3200C16 16GB

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Kingston ACR256X64D3S1333C9 2GB

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Corsair CMK64GX4M2C3200C16 32GB

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Kingston 9905403-134.A00LF 2GB

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UMAX Technology D4-2666-8GB-1024X8-L 8GB

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Nanya Technology M2X4G64CB8HG9N-DG 4GB

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Micron Technology 4ATF51264HZ-2G3E2 4GB

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Mushkin 991586 2GB

Mushkin 991586 2GB

Samsung M471A1G44AB0-CWE 8GB

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Corsair CMSO4GX3M1C1600C11 4GB

Corsair CMSO4GX3M1C1600C11 4GB

Crucial Technology BLS8G4D240FSB.16FBD2 8GB

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SK Hynix HMA41GR7AFR8N-TF 8GB

SK Hynix HMA41GR7AFR8N-TF 8GB