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Samsung M393B1K70CH0-CH9 8GB
Samsung M471A5244CB0-CWE 4GB

Samsung M393B1K70CH0-CH9 8GB vs Samsung M471A5244CB0-CWE 4GB

总分
star star star star star
Samsung M393B1K70CH0-CH9 8GB

Samsung M393B1K70CH0-CH9 8GB

总分
star star star star star
Samsung M471A5244CB0-CWE 4GB

Samsung M471A5244CB0-CWE 4GB

差异 规格 评论

差异

Samsung M393B1K70CH0-CH9 8GB 需要考虑的原因
Samsung M393B1K70CH0-CH9 8GB
报告一个错误
Samsung M471A5244CB0-CWE 4GB 需要考虑的原因
Samsung M471A5244CB0-CWE 4GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    38 left arrow 44
    左右 -16% 更低的延时
  • 更快的读取速度，GB/s
    15.5 left arrow 11.2
    测试中的平均数值
  • 更快的写入速度，GB/s
    12.0 left arrow 8.1
    测试中的平均数值
  • 更高的内存带宽，mbps
    25600 left arrow 10600
    左右 2.42 更高的带宽

规格

完整的技术规格清单
Samsung M393B1K70CH0-CH9 8GB
Samsung M471A5244CB0-CWE 4GB
主要特点
  • 存储器类型
    DDR3 left arrow DDR4
  • PassMark中的延时，ns
    44 left arrow 38
  • 读取速度，GB/s
    11.2 left arrow 15.5
  • 写入速度，GB/s
    8.1 left arrow 12.0
  • 内存带宽，mbps
    10600 left arrow 25600
Other
  • 描述
    PC3-10600, 1.5V, CAS Supported: 6 7 8 9 left arrow PC4-25600, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21 22 24
  • 时序/时钟速度
    7-7-7-20 / 1333 MHz left arrow 20-20-20, 22-22-22, 24-24-24 / 3200 MHz
  • 排名PassMark (越多越好)
    2293 left arrow 2283

Samsung M393B1K70CH0-CH9 8GB RAM的比较

EVGA 08G-D3-2133-MR 4GB
Elpida EBJ40UG8EFW0-GN-F 4GB

Samsung M471A5244CB0-CWE 4GB RAM的比较

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Crucial Technology BLS4G4D240FSE.8FBD 4GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
RAM 2

最新比较

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内存RAM
SK Hynix HMT31GR7CFR4C-PB 8GB
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Micron Technology 8ATF2G64AZ-3G2E1 16GB
内存RAM
Kingston 99U5428-046.A00LF 4GB
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UMAX Technology D4-2400-4GB-512X8-L 4GB
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内存RAM
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
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V-Color Technology Inc. TL48G30S816KRGB 8GB
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内存RAM
Micron Technology 18HTF12872AY-800F1 1GB
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内存RAM
Corsair CMX8GX3M2A2000C9 4GB
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内存RAM
Kingston KVR16N11/8-SP 8GB
Kingston KVR16N11/8-SP 8GB
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Essencore Limited KD48GS88C-32N2200 8GB
内存RAM
Hynix Semiconductor (Hyundai Electronics) HYMP125S64CP8-Y5 2GB
Hynix Semiconductor (Hyundai Electronics) HYMP125S64CP8
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G Skill Intl F4-4600C19-8GTZSWC 8GB
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G Skill Intl F3-14900CL8-4GBXM 4GB
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Corsair CMH32GX4M4E3200C16 8GB
内存RAM
Kingston KHX318C10FR/8G 8GB
Kingston KHX318C10FR/8G 8GB
Memphis Electronic D4SO1G724GI-A58SD 8GB
Memphis Electronic D4SO1G724GI-A58SD 8GB
内存RAM
STEC (Silicon Tech) S1024R3NN2QK-I 1GB
STEC (Silicon Tech) S1024R3NN2QK-I 1GB
Crucial Technology CT8G4DFS8266.M8FD 8GB
Crucial Technology CT8G4DFS8266.M8FD 8GB
内存RAM
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内存RAM
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Apacer Technology D12.2356WS.001 8GB
内存RAM
Smart Modular SF564128CJ8N6NNSEG 4GB
Smart Modular SF564128CJ8N6NNSEG 4GB
Thermaltake Technology Co Ltd R022D408GX2-3200C16A 8GB
Thermaltake Technology Co Ltd R022D408GX2-3200C16A 8GB
内存RAM