Samsung M393B1K70QB0-CK0 8GB vs Corsair CMD32GX4M4C3200C14C 8GB

总分

Samsung M393B1K70QB0-CK0 8GB

Samsung M393B1K70QB0-CK0 8GB

总分

Corsair CMD32GX4M4C3200C14C 8GB

Corsair CMD32GX4M4C3200C14C 8GB

差异规格评论

差异

Samsung M393B1K70QB0-CK0 8GB

需要考虑的原因
Samsung M393B1K70QB0-CK0 8GB

报告一个错误

Corsair CMD32GX4M4C3200C14C 8GB

需要考虑的原因
Corsair CMD32GX4M4C3200C14C 8GB

报告一个错误

低于PassMark测试中的延时，ns

25 47

左右 -88% 更低的延时
更快的读取速度，GB/s

15.4 10.4

测试中的平均数值
更快的写入速度，GB/s

11.3 7.8

测试中的平均数值
更高的内存带宽，mbps

17000 12800

左右 1.33 更高的带宽

规格

完整的技术规格清单

Samsung M393B1K70QB0-CK0 8GB

Corsair CMD32GX4M4C3200C14C 8GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

47 25
读取速度，GB/s

10.4 15.4
写入速度，GB/s

7.8 11.3
内存带宽，mbps

12800 17000

Other

描述

PC3-12800, 1.5V, CAS Supported: 6 7 8 9 10 11 PC4-17000, 1.2V, CAS Supported: 9 10 11 12 13 14 15 16
时序/时钟速度

9-9-9-24 / 1600 MHz 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)

2169 3005

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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Crucial Technology BLE8G4D32BEEAK.K8FB 8GB

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Crucial Technology BL16G36C16U4R.M8FB1 16GB

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Kingston 9905403-444.A00LF 4GB

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G Skill Intl F4-2133C15-8GVR 8GB

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Kingston 99U5474-013.A00LF 2GB

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G Skill Intl F4-3200C16-16GTZN 16GB

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Smart Modular SF564128CJ8N6NNSEG 4GB

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Samsung 18ASF1G72PDZ-2G1B1 16GB

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Kingston 99U5584-007.A00LF 4GB

Crucial Technology BL8G32C16U4W.M8FE 8GB

Crucial Technology BL8G32C16U4W.M8FE 8GB

Kingston ACR256X64D3S1333C9 2GB

Kingston ACR256X64D3S1333C9 2GB

Micron Technology 4ATF51264AZ-2G3E1 4GB

Micron Technology 4ATF51264AZ-2G3E1 4GB

Micron Technology 16JTF51264HZ-1G6M1 4GB

Micron Technology 16JTF51264HZ-1G6M1 4GB

Corsair CMU16GX4M2A2666C16 8GB

Corsair CMU16GX4M2A2666C16 8GB

Corsair CM2X1024-8500C5D 1GB

Corsair CM2X1024-8500C5D 1GB

Kingston XN205T-HYD2 16GB

Kingston XN205T-HYD2 16GB