Samsung M393B1K70QB0-CK0 8GB vs Micron Technology TEAMGROUP-UD4-2400 16GB

总分

Samsung M393B1K70QB0-CK0 8GB

Samsung M393B1K70QB0-CK0 8GB

总分

Micron Technology TEAMGROUP-UD4-2400 16GB

Micron Technology TEAMGROUP-UD4-2400 16GB

差异规格评论

差异

Samsung M393B1K70QB0-CK0 8GB

需要考虑的原因
Samsung M393B1K70QB0-CK0 8GB

报告一个错误

Micron Technology TEAMGROUP-UD4-2400 16GB

需要考虑的原因
Micron Technology TEAMGROUP-UD4-2400 16GB

报告一个错误

低于PassMark测试中的延时，ns

30 47

左右 -57% 更低的延时
更快的读取速度，GB/s

16.8 10.4

测试中的平均数值
更快的写入速度，GB/s

11.3 7.8

测试中的平均数值
更高的内存带宽，mbps

19200 12800

左右 1.5 更高的带宽

规格

完整的技术规格清单

Samsung M393B1K70QB0-CK0 8GB

Micron Technology TEAMGROUP-UD4-2400 16GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

47 30
读取速度，GB/s

10.4 16.8
写入速度，GB/s

7.8 11.3
内存带宽，mbps

12800 19200

Other

描述

PC3-12800, 1.5V, CAS Supported: 6 7 8 9 10 11 PC4-19200, 1.2V, CAS Supported: 11 12 13 14 15 16 18
时序/时钟速度

9-9-9-24 / 1600 MHz 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
排名PassMark (越多越好)

2169 3119

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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Mushkin 991988 (996988) 4GB

Mushkin 991988 (996988) 4GB

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Kingston 9905599-029.A00G 4GB

Nanya Technology M2X4G64CB8HG9N-DG 4GB

Nanya Technology M2X4G64CB8HG9N-DG 4GB

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Essencore Limited KD4AGU88C-26N1900 16GB

Kingston KTC1G-UDIMM 1GB

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Micron Technology 8ATF1G64HZ-2G2G1 8GB