Samsung M393B1K70QB0-CK0 8GB vs V-GEN D4H4GS24A8 4GB

总分

Samsung M393B1K70QB0-CK0 8GB

Samsung M393B1K70QB0-CK0 8GB

总分

V-GEN D4H4GS24A8 4GB

V-GEN D4H4GS24A8 4GB

差异规格评论

差异

Samsung M393B1K70QB0-CK0 8GB

需要考虑的原因
Samsung M393B1K70QB0-CK0 8GB

报告一个错误

低于PassMark测试中的延时，ns

47 94

左右 50% 更低的延时

V-GEN D4H4GS24A8 4GB

需要考虑的原因
V-GEN D4H4GS24A8 4GB

报告一个错误

更快的读取速度，GB/s

14.7 10.4

测试中的平均数值
更快的写入速度，GB/s

7.9 7.8

测试中的平均数值
更高的内存带宽，mbps

19200 12800

左右 1.5 更高的带宽

规格

完整的技术规格清单

Samsung M393B1K70QB0-CK0 8GB

V-GEN D4H4GS24A8 4GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

47 94
读取速度，GB/s

10.4 14.7
写入速度，GB/s

7.8 7.9
内存带宽，mbps

12800 19200

Other

描述

PC3-12800, 1.5V, CAS Supported: 6 7 8 9 10 11 PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18
时序/时钟速度

9-9-9-24 / 1600 MHz 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
排名PassMark (越多越好)

2169 1506

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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Essencore Limited KD48GU481-26N1600 8GB

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Corsair CMD128GX4M8B2800C14 16GB

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A-DATA Technology DQVE1908 512MB

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Mushkin 99[2/7/4]204F 4GB

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Avexir Technologies Corporation DDR4-2400 CL16 8GB 8GB

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Samsung 1600 CL10 Series 8GB

Shenzhen Jinge Information Co. Ltd. BRBP1G48G16C2400 8GB

Shenzhen Jinge Information Co. Ltd. BRBP1G48G16C2400 8G

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SK Hynix HMT325S6BFR8C-H9 2GB

Corsair CMWX8GD3000C15W4 8GB

Corsair CMWX8GD3000C15W4 8GB

Nanya Technology NT4GC64B8HG0NS-CG 4GB

Nanya Technology NT4GC64B8HG0NS-CG 4GB

Kingston X3XCFP-HYA 8GB

Kingston X3XCFP-HYA 8GB

Corsair VSA2GSDS667C4 2GB

Corsair VSA2GSDS667C4 2GB

Crucial Technology CT8G4SFD824A.C16FDD2 8GB

Crucial Technology CT8G4SFD824A.C16FDD2 8GB

Qimonda 72T128420EFA3SB2 1GB

Qimonda 72T128420EFA3SB2 1GB

SK Hynix HMA82GU6MFR8N-TF 16GB

SK Hynix HMA82GU6MFR8N-TF 16GB