Samsung M393B2G70BH0-CH9 16GB vs Chun Well Technology Holding Limited CL19-20-20 D4-3600 16GB

总分

Samsung M393B2G70BH0-CH9 16GB

Samsung M393B2G70BH0-CH9 16GB

总分

Chun Well Technology Holding Limited CL19-20-20 D4-3600 16GB

Chun Well Technology Holding Limited CL19-20-20 D4-3600 16GB

差异规格评论

差异

Samsung M393B2G70BH0-CH9 16GB

需要考虑的原因
Samsung M393B2G70BH0-CH9 16GB

报告一个错误

低于PassMark测试中的延时，ns

33 35

左右 6% 更低的延时

Chun Well Technology Holding Limited CL19-20-20 D4-3600 16GB

需要考虑的原因
Chun Well Technology Holding Limited CL19-20-20 D4-3600 16GB

报告一个错误

更快的读取速度，GB/s

10.5 8

测试中的平均数值
更快的写入速度，GB/s

8.1 7.3

测试中的平均数值
更高的内存带宽，mbps

17000 10600

左右 1.6 更高的带宽

规格

完整的技术规格清单

Samsung M393B2G70BH0-CH9 16GB

Chun Well Technology Holding Limited CL19-20-20 D4-3600 16GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

33 35
读取速度，GB/s

8.0 10.5
写入速度，GB/s

7.3 8.1
内存带宽，mbps

10600 17000

Other

描述

PC3-10600, 1.5V, CAS Supported: 6 7 8 9 PC4-17000, 1.2V, CAS Supported: 14 15 16
时序/时钟速度

7-7-7-20 / 1333 MHz 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)

1911 1998

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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Micron Technology 8ATF1G64HZ-2G6D1 8GB

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