Samsung M393B2G70BH0-CH9 16GB vs Crucial Technology CT16G4SFD8266.C16FE 16GB

总分

Samsung M393B2G70BH0-CH9 16GB

Samsung M393B2G70BH0-CH9 16GB

总分

Crucial Technology CT16G4SFD8266.C16FE 16GB

Crucial Technology CT16G4SFD8266.C16FE 16GB

差异规格评论

差异

Samsung M393B2G70BH0-CH9 16GB

需要考虑的原因
Samsung M393B2G70BH0-CH9 16GB

报告一个错误

低于PassMark测试中的延时，ns

33 37

左右 11% 更低的延时

Crucial Technology CT16G4SFD8266.C16FE 16GB

需要考虑的原因
Crucial Technology CT16G4SFD8266.C16FE 16GB

报告一个错误

更快的读取速度，GB/s

14.9 8

测试中的平均数值
更快的写入速度，GB/s

13.0 7.3

测试中的平均数值
更高的内存带宽，mbps

21300 10600

左右 2.01 更高的带宽

规格

完整的技术规格清单

Samsung M393B2G70BH0-CH9 16GB

Crucial Technology CT16G4SFD8266.C16FE 16GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

33 37
读取速度，GB/s

8.0 14.9
写入速度，GB/s

7.3 13.0
内存带宽，mbps

10600 21300

Other

描述

PC3-10600, 1.5V, CAS Supported: 6 7 8 9 PC4-21300, 1.2V, CAS Supported: 10 12 13 14 15 16 17 18 19 20
时序/时钟速度

7-7-7-20 / 1333 MHz 17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
排名PassMark (越多越好)

1911 2836

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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Kingston KHX2400C15S4/8G 8GB

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I’M Intelligent Memory Ltd. PF4OUN-2400CH0-08G-A 8GB

I’M Intelligent Memory Ltd. PF4OUN-2400CH0-08G-A 8GB

Nanya Technology NT4GC72B4NA1NL-CG 4GB

Nanya Technology NT4GC72B4NA1NL-CG 4GB

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SK Hynix HMAA2GU6CJR8N-XN 16GB

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Ramos Technology RMB4GB58BCA3-13HC 4GB

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Crucial Technology BLT4G3D1337DT1TX0. 4GB

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Patriot Memory (PDP Systems) PSD48G266681S 8GB

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