Samsung M393B2G70BH0-CH9 16GB vs Kingston KHX3200C16D4/32GX 32GB

总分

Samsung M393B2G70BH0-CH9 16GB

Samsung M393B2G70BH0-CH9 16GB

总分

Kingston KHX3200C16D4/32GX 32GB

Kingston KHX3200C16D4/32GX 32GB

差异规格评论

差异

Samsung M393B2G70BH0-CH9 16GB

需要考虑的原因
Samsung M393B2G70BH0-CH9 16GB

报告一个错误

低于PassMark测试中的延时，ns

33 34

左右 3% 更低的延时

Kingston KHX3200C16D4/32GX 32GB

需要考虑的原因
Kingston KHX3200C16D4/32GX 32GB

报告一个错误

更快的读取速度，GB/s

17.1 8

测试中的平均数值
更快的写入速度，GB/s

13.6 7.3

测试中的平均数值
更高的内存带宽，mbps

19200 10600

左右 1.81 更高的带宽

规格

完整的技术规格清单

Samsung M393B2G70BH0-CH9 16GB

Kingston KHX3200C16D4/32GX 32GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

33 34
读取速度，GB/s

8.0 17.1
写入速度，GB/s

7.3 13.6
内存带宽，mbps

10600 19200

Other

描述

PC3-10600, 1.5V, CAS Supported: 6 7 8 9 PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18
时序/时钟速度

7-7-7-20 / 1333 MHz 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
排名PassMark (越多越好)

1911 3472

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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TwinMOS 8DHE3MN8-HATP 2GB

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Corsair CM4X8GD3600C18K2D 8GB

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Kingmax Semiconductor FLFE85F-C8KL9 2GB

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Gold Key Technology Co Ltd GKE400SO51216-2400 4GB

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Corsair CMX8GX3M2A2000C9 4GB

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Hexon Technology Pte Ltd HEXON 1GB

Crucial Technology CT8G4SFS8213.C8FBD1 8GB

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Kingston 9905403-090.A01LF 4GB

Kingston 9905403-090.A01LF 4GB

SK Hynix HMA42GR7MFR4N-TF 16GB

SK Hynix HMA42GR7MFR4N-TF 16GB

SK Hynix HYMP512U64CP8-Y5 1GB

SK Hynix HYMP512U64CP8-Y5 1GB

Corsair CMD32GX4M4E4000C19 8GB

Corsair CMD32GX4M4E4000C19 8GB

Hexon Technology Pte Ltd HEXON 1GB

Hexon Technology Pte Ltd HEXON 1GB

A-DATA Technology AO1P24HC8T1-BSFS 8GB

A-DATA Technology AO1P24HC8T1-BSFS 8GB

Corsair CMZ16GX3M2A2400C10 8GB

Corsair CMZ16GX3M2A2400C10 8GB

Crucial Technology BLS8G4D30CESTK.8FD 8GB

Crucial Technology BLS8G4D30CESTK.8FD 8GB