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Samsung M393B2G70BH0-CH9 16GB
Patriot Memory (PDP Systems) PSD48G266681 8GB

Samsung M393B2G70BH0-CH9 16GB vs Patriot Memory (PDP Systems) PSD48G266681 8GB

总分
star star star star star
Samsung M393B2G70BH0-CH9 16GB

Samsung M393B2G70BH0-CH9 16GB

总分
star star star star star
Patriot Memory (PDP Systems) PSD48G266681 8GB

Patriot Memory (PDP Systems) PSD48G266681 8GB

差异 规格 评论

差异

Samsung M393B2G70BH0-CH9 16GB 需要考虑的原因
Samsung M393B2G70BH0-CH9 16GB
报告一个错误
Patriot Memory (PDP Systems) PSD48G266681 8GB 需要考虑的原因
Patriot Memory (PDP Systems) PSD48G266681 8GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    31 left arrow 33
    左右 -6% 更低的延时
  • 更快的读取速度，GB/s
    15.5 left arrow 8
    测试中的平均数值
  • 更快的写入速度，GB/s
    12.2 left arrow 7.3
    测试中的平均数值
  • 更高的内存带宽，mbps
    21300 left arrow 10600
    左右 2.01 更高的带宽

规格

完整的技术规格清单
Samsung M393B2G70BH0-CH9 16GB
Patriot Memory (PDP Systems) PSD48G266681 8GB
主要特点
  • 存储器类型
    DDR3 left arrow DDR4
  • PassMark中的延时，ns
    33 left arrow 31
  • 读取速度，GB/s
    8.0 left arrow 15.5
  • 写入速度，GB/s
    7.3 left arrow 12.2
  • 内存带宽，mbps
    10600 left arrow 21300
Other
  • 描述
    PC3-10600, 1.5V, CAS Supported: 6 7 8 9 left arrow PC4-21300, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20
  • 时序/时钟速度
    7-7-7-20 / 1333 MHz left arrow 17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
  • 排名PassMark (越多越好)
    1911 left arrow 3031

Samsung M393B2G70BH0-CH9 16GB RAM的比较

Samsung M393B1K70BH1-CH9 8GB
Essencore Limited KD48GU880-34A170X 8GB

Patriot Memory (PDP Systems) PSD48G266681 8GB RAM的比较

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Crucial Technology BLS4G4D240FSE.8FBD 4GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
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最新比较

Crucial Technology CT51264AC800.C16FC 4GB
Crucial Technology CT51264AC800.C16FC 4GB
Crucial Technology BLS8G4D26BFSC.16FBD2 8GB
Crucial Technology BLS8G4D26BFSC.16FBD2 8GB
内存RAM
Kingston 99U5584-005.A00LF 4GB
Kingston 99U5584-005.A00LF 4GB
Patriot Memory (PDP Systems) PSD416G21332S 16GB
Patriot Memory (PDP Systems) PSD416G21332S 16GB
内存RAM
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TwinMOS 8DHE3MN8-HATP 2GB
G Skill Intl F4-3600C17-8GTZKW 8GB
G Skill Intl F4-3600C17-8GTZKW 8GB
内存RAM
Samsung M393B2G70BH0-CH9 16GB
Samsung M393B2G70BH0-CH9 16GB
Patriot Memory (PDP Systems) PSD48G266681 8GB
Patriot Memory (PDP Systems) PSD48G266681 8GB
内存RAM
Patriot Memory (PDP Systems) PSD34G16002 4GB
Patriot Memory (PDP Systems) PSD34G16002 4GB
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Wilk Elektronik S.A. GR3200S464L22/16G 16GB
内存RAM
Kingston 99U5584-001.A00LF 4GB
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G Skill Intl F4-4266C19-8GTZA 8GB
内存RAM
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Mushkin 991586 2GB
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G Skill Intl F4-4266C17-8GTZRB 8GB
内存RAM
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Samsung M393A1G40DB0-CPB 8GB
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G Skill Intl F4-3600C19-8GSXF 8GB
内存RAM
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Kingston 9905471-076.A00LF 8GB
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Crucial Technology BLS16G4D26BFSB.16FBD 16GB
内存RAM
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PNY Electronics PNY 2GB
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G Skill Intl F4-2400C15-4GNT 4GB
内存RAM
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Crucial Technology CT102464BA160B.M16 8GB
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G Skill Intl F4-3600C17-8GTZR 8GB
内存RAM
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Kingston 9905678-026.A00G 8GB
内存RAM
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Samsung M3 78T2953EZ3-CF7 1GB
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UMAX Technology D4-2666-8GB-1024X8-L 8GB
内存RAM
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Samsung M3 78T2953EZ3-CF7 1GB
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内存RAM