Samsung M393B2G70BH0-CK0 16GB vs Crucial Technology CT16G4SFD824A.M16FE 16GB

总分

Samsung M393B2G70BH0-CK0 16GB

Samsung M393B2G70BH0-CK0 16GB

总分

Crucial Technology CT16G4SFD824A.M16FE 16GB

Crucial Technology CT16G4SFD824A.M16FE 16GB

差异规格评论

差异

Samsung M393B2G70BH0-CK0 16GB

需要考虑的原因
Samsung M393B2G70BH0-CK0 16GB

报告一个错误

Crucial Technology CT16G4SFD824A.M16FE 16GB

需要考虑的原因
Crucial Technology CT16G4SFD824A.M16FE 16GB

报告一个错误

低于PassMark测试中的延时，ns

37 54

左右 -46% 更低的延时
更快的读取速度，GB/s

14.7 9.2

测试中的平均数值
更快的写入速度，GB/s

11.6 8.1

测试中的平均数值
更高的内存带宽，mbps

19200 12800

左右 1.5 更高的带宽

规格

完整的技术规格清单

Samsung M393B2G70BH0-CK0 16GB

Crucial Technology CT16G4SFD824A.M16FE 16GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

54 37
读取速度，GB/s

9.2 14.7
写入速度，GB/s

8.1 11.6
内存带宽，mbps

12800 19200

Other

描述

PC3-12800, 1.5V, CAS Supported: 6 7 8 9 10 11 PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21
时序/时钟速度

9-9-9-24 / 1600 MHz 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
排名PassMark (越多越好)

2105 2688

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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Samsung M378A5143EB1-CPB 4GB

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Elpida EBJ41UF8BDU5-GN-F 4GB

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Nanya Technology NT512T64U88B0BY-3C 512MB

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Kingston 9905744-035.A00G 16GB

Nanya Technology M2X4G64CB8HG9N-DG 4GB

Nanya Technology M2X4G64CB8HG9N-DG 4GB

Chun Well Technology Holding Limited CL18-22-22 D4-3600 16GB

Chun Well Technology Holding Limited CL18-22-22 D4-3600

Kingston 9905403-156.A00LF 2GB

Kingston 9905403-156.A00LF 2GB

Corsair CMK16GX4M2B3200C16 8GB

Corsair CMK16GX4M2B3200C16 8GB

AMD AE34G1601U1 4GB

AMD AE34G1601U1 4GB

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Crucial Technology CT4G4DFS8213.C8FADP 4GB