Samsung M393B2G70BH0-CK0 16GB vs G Skill Intl F4-2400C17-4GFT 4GB

总分

Samsung M393B2G70BH0-CK0 16GB

Samsung M393B2G70BH0-CK0 16GB

总分

G Skill Intl F4-2400C17-4GFT 4GB

G Skill Intl F4-2400C17-4GFT 4GB

差异规格评论

差异

Samsung M393B2G70BH0-CK0 16GB

需要考虑的原因
Samsung M393B2G70BH0-CK0 16GB

报告一个错误

低于PassMark测试中的延时，ns

54 79

左右 32% 更低的延时
更快的写入速度，GB/s

8.1 6.8

测试中的平均数值

G Skill Intl F4-2400C17-4GFT 4GB

需要考虑的原因
G Skill Intl F4-2400C17-4GFT 4GB

报告一个错误

更快的读取速度，GB/s

14 9.2

测试中的平均数值
更高的内存带宽，mbps

19200 12800

左右 1.5 更高的带宽

规格

完整的技术规格清单

Samsung M393B2G70BH0-CK0 16GB

G Skill Intl F4-2400C17-4GFT 4GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

54 79
读取速度，GB/s

9.2 14.0
写入速度，GB/s

8.1 6.8
内存带宽，mbps

12800 19200

Other

描述

PC3-12800, 1.5V, CAS Supported: 6 7 8 9 10 11 PC4-19200, 1.2V, CAS Supported: 9 11 13 15 17
时序/时钟速度

9-9-9-24 / 1600 MHz 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
排名PassMark (越多越好)

2105 1330

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

最新比较

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Apacer Technology 78.CAGPL.ARC0B 8GB

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Hexon Technology Pte Ltd HEXON 1GB

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Corsair CMT16GX4M2C3600C18 8GB

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Kingston KHX1600C9D3/4G 4GB

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Corsair CMK16GX4M2B3466C16 8GB

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Kingston KHX1600C9S3L/8G 8GB

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AMD R5S38G1601U2S 8GB

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Elpida EBJ10UE8BAFA-AE-E 1GB

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Kingmax Semiconductor FLFE85F-C8KL9 2GB

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Samsung M3 78T2953EZ3-CF7 1GB

Samsung M3 78T2953EZ3-CF7 1GB

Crucial Technology BLS8G4D26BFSCK.8FD 8GB

Crucial Technology BLS8G4D26BFSCK.8FD 8GB

Corsair CM3X8GA2400C11Y2R 8GB

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Shenzhen Xingmem Technology Corp 8ATF51264AZ-2G1A1 4GB

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Crucial Technology BL16G32C16U4W.M16FE1 16GB

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Samsung M378B5173BH0-CH9 4GB

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Apacer Technology 78.C1GS7.DFW0C 8GB

Apacer Technology 78.C1GS7.DFW0C 8GB