Samsung M393B2G70BH0-YK0 16GB vs A-DATA Technology AO1P32NC8W1-BDAS 8GB

总分

Samsung M393B2G70BH0-YK0 16GB

Samsung M393B2G70BH0-YK0 16GB

总分

A-DATA Technology AO1P32NC8W1-BDAS 8GB

A-DATA Technology AO1P32NC8W1-BDAS 8GB

差异规格评论

差异

Samsung M393B2G70BH0-YK0 16GB

需要考虑的原因
Samsung M393B2G70BH0-YK0 16GB

报告一个错误

A-DATA Technology AO1P32NC8W1-BDAS 8GB

需要考虑的原因
A-DATA Technology AO1P32NC8W1-BDAS 8GB

报告一个错误

低于PassMark测试中的延时，ns

49 63

左右 -29% 更低的延时
更快的读取速度，GB/s

15.8 8.1

测试中的平均数值
更快的写入速度，GB/s

11.5 7.5

测试中的平均数值
更高的内存带宽，mbps

25600 12800

左右 2 更高的带宽

规格

完整的技术规格清单

Samsung M393B2G70BH0-YK0 16GB

A-DATA Technology AO1P32NC8W1-BDAS 8GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

63 49
读取速度，GB/s

8.1 15.8
写入速度，GB/s

7.5 11.5
内存带宽，mbps

12800 25600

Other

描述

PC3-12800, 1.5V, 1.35V , CAS Supported: 6 7 8 9 10 11 PC4-25600, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21 22 24
时序/时钟速度

9-9-9-24 / 1600 MHz 20-20-20, 22-22-22, 24-24-24 / 3200 MHz
排名PassMark (越多越好)

1945 2673

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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Crucial Technology CT8G4SFS824A.C8FBR1 8GB

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SK Hynix DDR2 800 2G 2GB

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SK Hynix GKE800UD102408-2400 8GB

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Avexir Technologies Corporation DDR4-3000 CL15 8GB 8GB

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AMD R748G2133U2S 8GB

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G Skill Intl F3-14900CL8-4GBXM 4GB

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Essencore Limited IM4AGU88N26-GIIHMB 16GB

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Samsung M4 70T2953EZ3-CE6 1GB

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Team Group Inc. TEAMGROUP-UD4-3600 8GB

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Kingston ACR256X64D3S1333C9 2GB

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G Skill Intl F4-3733C17-16GTZKK 16GB

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Crucial Technology BLE8G4D36BEEAK.M8FE1 8GB

Crucial Technology BLE8G4D36BEEAK.M8FE1 8GB