Samsung M393B2G70BH0-YK0 16GB vs Crucial Technology CT32G4DFD8266.M16FB 32GB

总分

Samsung M393B2G70BH0-YK0 16GB

Samsung M393B2G70BH0-YK0 16GB

总分

Crucial Technology CT32G4DFD8266.M16FB 32GB

Crucial Technology CT32G4DFD8266.M16FB 32GB

差异规格评论

差异

Samsung M393B2G70BH0-YK0 16GB

需要考虑的原因
Samsung M393B2G70BH0-YK0 16GB

报告一个错误

Crucial Technology CT32G4DFD8266.M16FB 32GB

需要考虑的原因
Crucial Technology CT32G4DFD8266.M16FB 32GB

报告一个错误

低于PassMark测试中的延时，ns

33 63

左右 -91% 更低的延时
更快的读取速度，GB/s

15.3 8.1

测试中的平均数值
更快的写入速度，GB/s

12.9 7.5

测试中的平均数值
更高的内存带宽，mbps

21300 12800

左右 1.66 更高的带宽

规格

完整的技术规格清单

Samsung M393B2G70BH0-YK0 16GB

Crucial Technology CT32G4DFD8266.M16FB 32GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

63 33
读取速度，GB/s

8.1 15.3
写入速度，GB/s

7.5 12.9
内存带宽，mbps

12800 21300

Other

描述

PC3-12800, 1.5V, 1.35V , CAS Supported: 6 7 8 9 10 11 PC4-21300, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20
时序/时钟速度

9-9-9-24 / 1600 MHz 17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
排名PassMark (越多越好)

1945 3315

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

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RAM 2

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Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB

Corsair CM4X16GC3200C16K2E 16GB

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Kingston ACR256X64D3S1333C9 2GB

Kingston ACR256X64D3S1333C9 2GB

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Hynix Semiconductor (Hyundai Electronics) HYMP125S64CP8-Y5 2GB

Hynix Semiconductor (Hyundai Electronics) HYMP125S64CP8

Kllisre 8ATF1G64AZ-2G6H1 8GB

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SK Hynix HMT451U7BFR8C-RD 4GB

SK Hynix HMT451U7BFR8C-RD 4GB

Apacer Technology 78.CAGMR.40C0B 8GB

Apacer Technology 78.CAGMR.40C0B 8GB

Kingston 9905403-061.A00LF 2GB

Kingston 9905403-061.A00LF 2GB

Micron Technology 4ATF1G64HZ-3G2B2 8GB

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