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Samsung M393B5170EH1-CF8 4GB
Smart Modular SMS4WEC3C0K0446SCG 4GB

Samsung M393B5170EH1-CF8 4GB vs Smart Modular SMS4WEC3C0K0446SCG 4GB

总分
star star star star star
Samsung M393B5170EH1-CF8 4GB

Samsung M393B5170EH1-CF8 4GB

总分
star star star star star
Smart Modular SMS4WEC3C0K0446SCG 4GB

Smart Modular SMS4WEC3C0K0446SCG 4GB

差异 规格 评论

差异

Samsung M393B5170EH1-CF8 4GB 需要考虑的原因
Samsung M393B5170EH1-CF8 4GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    33 left arrow 36
    左右 8% 更低的延时
Smart Modular SMS4WEC3C0K0446SCG 4GB 需要考虑的原因
Smart Modular SMS4WEC3C0K0446SCG 4GB
报告一个错误
  • 更快的读取速度，GB/s
    16 left arrow 9.6
    测试中的平均数值
  • 更快的写入速度，GB/s
    12.7 left arrow 8.4
    测试中的平均数值
  • 更高的内存带宽，mbps
    25600 left arrow 8500
    左右 3.01 更高的带宽

规格

完整的技术规格清单
Samsung M393B5170EH1-CF8 4GB
Smart Modular SMS4WEC3C0K0446SCG 4GB
主要特点
  • 存储器类型
    DDR3 left arrow DDR4
  • PassMark中的延时，ns
    33 left arrow 36
  • 读取速度，GB/s
    9.6 left arrow 16.0
  • 写入速度，GB/s
    8.4 left arrow 12.7
  • 内存带宽，mbps
    8500 left arrow 25600
Other
  • 描述
    PC3-8500, 1.5V, CAS Supported: 6 7 8 left arrow PC4-25600, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21 22 24
  • 时序/时钟速度
    7-7-7-20 / 1066 MHz left arrow 20-20-20, 22-22-22, 24-24-24 / 3200 MHz
  • 排名PassMark (越多越好)
    2065 left arrow 2353

Samsung M393B5170EH1-CF8 4GB RAM的比较

SK Hynix HMT351R7BFR8A-H9 4GB

Smart Modular SMS4WEC3C0K0446SCG 4GB RAM的比较

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
G Skill Intl F4-3000C15-8GVKB 8GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
RAM 2

最新比较

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