Samsung M393B5170FH0-CK0 4GB vs A-DATA Technology DDR4 3200 2OZ 4GB

总分

Samsung M393B5170FH0-CK0 4GB

Samsung M393B5170FH0-CK0 4GB

总分

A-DATA Technology DDR4 3200 2OZ 4GB

A-DATA Technology DDR4 3200 2OZ 4GB

差异规格评论

差异

Samsung M393B5170FH0-CK0 4GB

需要考虑的原因
Samsung M393B5170FH0-CK0 4GB

报告一个错误

低于PassMark测试中的延时，ns

27 29

左右 7% 更低的延时

A-DATA Technology DDR4 3200 2OZ 4GB

需要考虑的原因
A-DATA Technology DDR4 3200 2OZ 4GB

报告一个错误

更快的读取速度，GB/s

17.2 11.8

测试中的平均数值
更快的写入速度，GB/s

13.8 7.3

测试中的平均数值
更高的内存带宽，mbps

17000 12800

左右 1.33 更高的带宽

规格

完整的技术规格清单

Samsung M393B5170FH0-CK0 4GB

A-DATA Technology DDR4 3200 2OZ 4GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

27 29
读取速度，GB/s

11.8 17.2
写入速度，GB/s

7.3 13.8
内存带宽，mbps

12800 17000

Other

描述

PC3-12800, 1.5V, CAS Supported: 6 7 8 PC4-17000, 1.2V, CAS Supported: 9 11 12 13 14 15 16
时序/时钟速度

9-9-9-24 / 1600 MHz 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)

2057 3409

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

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RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

最新比较

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SK Hynix DDR2 800 2G 2GB

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Crucial Technology BLE16G4D32AEEA.K16FB 16GB

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Nanya Technology NT2GT64U8HD0BN-AD 2GB

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Micron Technology 18ASF2G72PDZ-2G6D1 16GB

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G Skill Intl F2-5300CL4-1GBSA 1GB

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A-DATA Technology AD4S3200316G22-BHYD 16GB

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Wilk Elektronik S.A. GY1866D364L9A/4G 4GB

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SK Hynix HMT351R7EFR8C-RD 4GB

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Avexir Technologies Corporation DDR4-2666 CL17 8GB 8GB

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Lenovo LMKU8G68AHFHD-32A 8GB

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Samsung M378A1G43DB0-CPB 8GB

Samsung M378A1G43DB0-CPB 8GB

AMD R538G1601U2S-UO 8GB

AMD R538G1601U2S-UO 8GB

G Skill Intl F4-3600C19-16GSXW 16GB

G Skill Intl F4-3600C19-16GSXW 16GB

Corsair CMX8GX3M2A2000C9 4GB

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Crucial Technology CT8G4SFRA266.M16FG 8GB

Crucial Technology CT8G4SFRA266.M16FG 8GB

Samsung M393B2G70BH0-CH9 16GB

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Micron Technology M471A1K43BB1-CRC 8GB

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Kingston 99U5403-036.A00G 4GB

Kingston 99U5403-036.A00G 4GB

Kingston 9965669-005.A01G 16GB

Kingston 9965669-005.A01G 16GB