Samsung M393B5170FH0-CK0 4GB vs SK Hynix HMA41GU6AFR8N-TF 8GB

总分

Samsung M393B5170FH0-CK0 4GB

Samsung M393B5170FH0-CK0 4GB

总分

SK Hynix HMA41GU6AFR8N-TF 8GB

SK Hynix HMA41GU6AFR8N-TF 8GB

差异规格评论

差异

Samsung M393B5170FH0-CK0 4GB

需要考虑的原因
Samsung M393B5170FH0-CK0 4GB

报告一个错误

低于PassMark测试中的延时，ns

27 36

左右 25% 更低的延时

SK Hynix HMA41GU6AFR8N-TF 8GB

需要考虑的原因
SK Hynix HMA41GU6AFR8N-TF 8GB

报告一个错误

更快的读取速度，GB/s

15.3 11.8

测试中的平均数值
更快的写入速度，GB/s

11.1 7.3

测试中的平均数值
更高的内存带宽，mbps

17000 12800

左右 1.33 更高的带宽

规格

完整的技术规格清单

Samsung M393B5170FH0-CK0 4GB

SK Hynix HMA41GU6AFR8N-TF 8GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

27 36
读取速度，GB/s

11.8 15.3
写入速度，GB/s

7.3 11.1
内存带宽，mbps

12800 17000

Other

描述

PC3-12800, 1.5V, CAS Supported: 6 7 8 PC4-17000, 1.2V, CAS Supported: 9 11 12 13 14 15 16
时序/时钟速度

9-9-9-24 / 1600 MHz 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)

2057 2696

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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Crucial Technology CT8G4DFD8213.C16FBD2 8GB

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Ramaxel Technology RMUA5090KB78HAF2133 8GB

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SK Hynix HMT325U6CFR8C-PB 2GB

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Kingston 9905403-134.A00LF 2GB

Corsair CMW128GX4M8X3600C18 16GB

Corsair CMW128GX4M8X3600C18 16GB

Samsung M395T2863QZ4-CF76 1GB

Samsung M395T2863QZ4-CF76 1GB

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Kingston HP32D4U8S8HD-8X 8GB

Kingston 9965525-155.A00LF 8GB

Kingston 9965525-155.A00LF 8GB

Crucial Technology CT8G4DFS824A.M8FA 8GB

Crucial Technology CT8G4DFS824A.M8FA 8GB

Smart Modular SH564128FH8NZQNSCG 4GB

Smart Modular SH564128FH8NZQNSCG 4GB

Corsair CMR16GX4M2K4266C19 8GB

Corsair CMR16GX4M2K4266C19 8GB

Samsung M471B5273BH1-CF8 4GB

Samsung M471B5273BH1-CF8 4GB

G Skill Intl F4-3200C16-16GTZKW 16GB

G Skill Intl F4-3200C16-16GTZKW 16GB