Samsung M4 70T2864QZ3-CF7 1GB vs Avexir Technologies Corporation DDR4-3200 CL16 8GB 8GB

总分

Samsung M4 70T2864QZ3-CF7 1GB

Samsung M4 70T2864QZ3-CF7 1GB

总分

Avexir Technologies Corporation DDR4-3200 CL16 8GB 8GB

Avexir Technologies Corporation DDR4-3200 CL16 8GB 8GB

差异规格评论

差异

Samsung M4 70T2864QZ3-CF7 1GB

需要考虑的原因
Samsung M4 70T2864QZ3-CF7 1GB

报告一个错误

更快的读取速度，GB/s

4 18.6

测试中的平均数值
更快的写入速度，GB/s

2,201.1 14.0

测试中的平均数值

Avexir Technologies Corporation DDR4-3200 CL16 8GB 8GB

需要考虑的原因
Avexir Technologies Corporation DDR4-3200 CL16 8GB 8GB

报告一个错误

低于PassMark测试中的延时，ns

21 74

左右 -252% 更低的延时
更高的内存带宽，mbps

17000 6400

左右 2.66 更高的带宽

规格

完整的技术规格清单

Samsung M4 70T2864QZ3-CF7 1GB

Avexir Technologies Corporation DDR4-3200 CL16 8GB 8GB

主要特点

存储器类型

DDR2 DDR4
PassMark中的延时，ns

74 21
读取速度，GB/s

4,178.4 18.6
写入速度，GB/s

2,201.1 14.0
内存带宽，mbps

6400 17000

Other

描述

PC2-6400, SSTL 1.8V, CAS Supported: 4 5 6 PC4-17000, 1.2V, CAS Supported: 12 14 15 16
时序/时钟速度

5-5-5-15 / 800 MHz 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)

508 3356

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

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Absolute Latency

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RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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A-DATA Technology AM2L16BC4R1-B0AS 4GB

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Hewlett-Packard 7TE39AA#ABC 8GB

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G Skill Intl F4-3200C22-16GRS 16GB

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Samsung M378A1K43EB2-CWE 8GB

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Avant Technology J641GU42J7240N3 8GB

Avant Technology J641GU42J7240N3 8GB

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Samsung M378B5273EB0-CK0 4GB

Apacer Technology 78.C2GF6.AU20B 8GB

Apacer Technology 78.C2GF6.AU20B 8GB

Hynix Semiconductor (Hyundai Electronics) HYMP125S64CP8-Y5 2GB

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Samsung M378A1K43DB2-CVF 8GB

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Corsair CMK64GX5M2B5200C40 32GB

Panram International Corporation PUD42400C154G2NJK 4GB

Panram International Corporation PUD42400C154G2NJK 4GB

Samsung M378B5673FH0-CH9 2GB

Samsung M378B5673FH0-CH9 2GB

Memphis Electronic D4SO1G724GI-A58SD 8GB

Memphis Electronic D4SO1G724GI-A58SD 8GB