Samsung M4 70T2953EZ3-CE6 1GB vs SK Hynix HMA851S6DJR6N-VK 4GB

总分

Samsung M4 70T2953EZ3-CE6 1GB

Samsung M4 70T2953EZ3-CE6 1GB

总分

SK Hynix HMA851S6DJR6N-VK 4GB

SK Hynix HMA851S6DJR6N-VK 4GB

差异规格评论

差异

Samsung M4 70T2953EZ3-CE6 1GB

需要考虑的原因
Samsung M4 70T2953EZ3-CE6 1GB

报告一个错误

更快的读取速度，GB/s

3 15

测试中的平均数值

SK Hynix HMA851S6DJR6N-VK 4GB

需要考虑的原因
SK Hynix HMA851S6DJR6N-VK 4GB

报告一个错误

低于PassMark测试中的延时，ns

40 73

左右 -83% 更低的延时
更快的写入速度，GB/s

11.2 1,423.3

测试中的平均数值
更高的内存带宽，mbps

21300 5300

左右 4.02 更高的带宽

规格

完整的技术规格清单

Samsung M4 70T2953EZ3-CE6 1GB

SK Hynix HMA851S6DJR6N-VK 4GB

主要特点

存储器类型

DDR2 DDR4
PassMark中的延时，ns

73 40
读取速度，GB/s

3,510.5 15.0
写入速度，GB/s

1,423.3 11.2
内存带宽，mbps

5300 21300

Other

描述

PC2-5300, SSTL 1.8V, CAS Supported: 3 4 5 PC4-21300, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20
时序/时钟速度

5-5-5-15 / 667 MHz 17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
排名PassMark (越多越好)

476 2100

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

最新比较

Samsung M4 70T2953EZ3-CE6 1GB

Samsung M4 70T2953EZ3-CE6 1GB

SK Hynix HMA851S6DJR6N-VK 4GB

SK Hynix HMA851S6DJR6N-VK 4GB

Samsung M391B5673EH1-CH9 2GB

Samsung M391B5673EH1-CH9 2GB

Corsair CMV16GX4M1A2400C16 16GB

Corsair CMV16GX4M1A2400C16 16GB

Elpida EBJ10UE8BAFA-AE-E 1GB

Elpida EBJ10UE8BAFA-AE-E 1GB

SK Hynix GKE800SO102408-2400 8GB

SK Hynix GKE800SO102408-2400 8GB

Samsung M393B1K70CH0-CH9 8GB

Samsung M393B1K70CH0-CH9 8GB

Wilk Elektronik S.A. GR3200S464L22/16G 16GB

Wilk Elektronik S.A. GR3200S464L22/16G 16GB

Corsair CMZ16GX3M2A2400C10 8GB

Corsair CMZ16GX3M2A2400C10 8GB

Crucial Technology BL8G30C15U4W.M8FE 8GB

Crucial Technology BL8G30C15U4W.M8FE 8GB

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB

JUHOR JHD2666U1908JG 8GB

JUHOR JHD2666U1908JG 8GB

AMD AE34G1601U1 4GB

AMD AE34G1601U1 4GB

Gold Key Technology Co Ltd NMUD480E86-3200 8GB

Gold Key Technology Co Ltd NMUD480E86-3200 8GB

Kingston ACR512X64D3S13C9G 4GB

Kingston ACR512X64D3S13C9G 4GB

Gold Key Technology Co Ltd GKE400SO51216-2400 4GB

Gold Key Technology Co Ltd GKE400SO51216-2400 4GB

Samsung M393B1G70BH0-YK0 8GB

Samsung M393B1G70BH0-YK0 8GB

Kingston HP32D4U8D8HC-16X 16GB

Kingston HP32D4U8D8HC-16X 16GB

Strontium EVMT8G1600U86S 8GB

Strontium EVMT8G1600U86S 8GB

Samsung M471A5244CB0-CWE 4GB

Samsung M471A5244CB0-CWE 4GB

Micron Technology 18HTF12872AY-800F1 1GB

Micron Technology 18HTF12872AY-800F1 1GB

Samsung M393A1G40DB1-CRC 8GB

Samsung M393A1G40DB1-CRC 8GB

Samsung M471B5773DH0-CH9 2GB

Samsung M471B5773DH0-CH9 2GB

Samsung M393A1G40DB0-B`B 8GB

Samsung M393A1G40DB0-B`B 8GB

TwinMOS 8DPT5MK8-TATP 2GB

TwinMOS 8DPT5MK8-TATP 2GB

G Skill Intl F4-4000C18-8GTZSW 8GB

G Skill Intl F4-4000C18-8GTZSW 8GB

Kingston 9905403-038.A00LF 4GB

Kingston 9905403-038.A00LF 4GB

Micron Technology 18ASF1G72PDZ-2G3A2 8GB

Micron Technology 18ASF1G72PDZ-2G3A2 8GB