Samsung M4 70T2953EZ3-CE6 1GB vs SpecTek Incorporated 16G2666CL19 16GB

总分

Samsung M4 70T2953EZ3-CE6 1GB

Samsung M4 70T2953EZ3-CE6 1GB

总分

SpecTek Incorporated 16G2666CL19 16GB

SpecTek Incorporated 16G2666CL19 16GB

差异规格评论

差异

Samsung M4 70T2953EZ3-CE6 1GB

需要考虑的原因
Samsung M4 70T2953EZ3-CE6 1GB

报告一个错误

更快的读取速度，GB/s

3 16.8

测试中的平均数值

SpecTek Incorporated 16G2666CL19 16GB

需要考虑的原因
SpecTek Incorporated 16G2666CL19 16GB

报告一个错误

低于PassMark测试中的延时，ns

22 73

左右 -232% 更低的延时
更快的写入速度，GB/s

14.8 1,423.3

测试中的平均数值
更高的内存带宽，mbps

21300 5300

左右 4.02 更高的带宽

规格

完整的技术规格清单

Samsung M4 70T2953EZ3-CE6 1GB

SpecTek Incorporated 16G2666CL19 16GB

主要特点

存储器类型

DDR2 DDR4
PassMark中的延时，ns

73 22
读取速度，GB/s

3,510.5 16.8
写入速度，GB/s

1,423.3 14.8
内存带宽，mbps

5300 21300

Other

描述

PC2-5300, SSTL 1.8V, CAS Supported: 3 4 5 PC4-21300, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20
时序/时钟速度

5-5-5-15 / 667 MHz 17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
排名PassMark (越多越好)

476 3296

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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Avexir Technologies Corporation T 4GB

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Corsair CMK32GX4M2K3600C16 16GB

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Micron Technology 18HTF12872AY-800F1 1GB

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Kingston 9905403-156.A00LF 2GB

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SK Hynix HMA82GS6CJR8N-V-V 16GB

SK Hynix HMA82GS6CJR8N-V-V 16GB

G Skill Intl F2-5300CL4-1GBSA 1GB

G Skill Intl F2-5300CL4-1GBSA 1GB

Corsair CMH16GX4M2Z3200C16 8GB

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Nanya Technology M2F8G64CB8HC9N-DI 8GB

Corsair CM4B4G1J2400A14K 4GB

Corsair CM4B4G1J2400A14K 4GB