Samsung M4 70T5663CZ3-CE6 2GB vs Crucial Technology CT8G4DFS8213.C8FBD1 8GB

总分

Samsung M4 70T5663CZ3-CE6 2GB

Samsung M4 70T5663CZ3-CE6 2GB

总分

Crucial Technology CT8G4DFS8213.C8FBD1 8GB

Crucial Technology CT8G4DFS8213.C8FBD1 8GB

差异规格评论

差异

Samsung M4 70T5663CZ3-CE6 2GB

需要考虑的原因
Samsung M4 70T5663CZ3-CE6 2GB

报告一个错误

更快的读取速度，GB/s

3 14.5

测试中的平均数值

Crucial Technology CT8G4DFS8213.C8FBD1 8GB

需要考虑的原因
Crucial Technology CT8G4DFS8213.C8FBD1 8GB

报告一个错误

低于PassMark测试中的延时，ns

33 69

左右 -109% 更低的延时
更快的写入速度，GB/s

9.5 1,441.2

测试中的平均数值
更高的内存带宽，mbps

17000 5300

左右 3.21 更高的带宽

规格

完整的技术规格清单

Samsung M4 70T5663CZ3-CE6 2GB

Crucial Technology CT8G4DFS8213.C8FBD1 8GB

主要特点

存储器类型

DDR2 DDR4
PassMark中的延时，ns

69 33
读取速度，GB/s

3,325.1 14.5
写入速度，GB/s

1,441.2 9.5
内存带宽，mbps

5300 17000

Other

描述

PC2-5300, SSTL 1.8V, CAS Supported: 3 4 5 PC4-17000, 1.2V, CAS Supported: 9 10 11 12 13 14 15 16 18 20
时序/时钟速度

5-5-5-15 / 667 MHz 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)

525 2543

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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A-DATA Technology AD73I1C1674EV 4GB

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Samsung M471B1G73CB0-CK0 8GB

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Apacer Technology GD2.1129WH.001 16GB

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Samsung M3 78T3354BZ0-CCC 256MB

Samsung M3 78T3354BZ0-CCC 256MB

Corsair CMW8GX4M1Z3600C18 8GB

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SK Hynix HMT351R7EFR8C-RD 4GB

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Essencore Limited IM4AGU88A30-FGGHMB 16GB

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Corsair CMX4GX3M1A1333C9 4GB

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Ramaxel Technology RMT3010EC58E8F1333 2GB

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G Skill Intl F4-2133C15-8GNS 8GB

G Skill Intl F4-2133C15-8GNS 8GB

A-DATA Technology DDR2 800G 2GB

A-DATA Technology DDR2 800G 2GB

Corsair CMD16GX4M4B3300C16 4GB

Corsair CMD16GX4M4B3300C16 4GB

Micron Technology 16JSF25664HZ-1G1F1 2GB

Micron Technology 16JSF25664HZ-1G1F1 2GB

UMAX Technology D4-2666-8GB-1024X8-L 8GB

UMAX Technology D4-2666-8GB-1024X8-L 8GB

Kingston 9905403-061.A00LF 2GB

Kingston 9905403-061.A00LF 2GB

Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB

Hynix Semiconductor (Hyundai Electronics) GKE160SO10240

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB

SK Hynix HMA41GR7MFR8N-TF 8GB

SK Hynix HMA41GR7MFR8N-TF 8GB

Kingston 9905403-447.A00LF 4GB

Kingston 9905403-447.A00LF 4GB

Kingston 9905630-005.A00G 8GB

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Samsung 1600 CL10 Series 8GB

Samsung 1600 CL10 Series 8GB

Transcend Information TS1GLH72V1H 8GB

Transcend Information TS1GLH72V1H 8GB