RAM
DDR5
DDR4
DDR3
DDR2
关于本网站
Menu
RAMs
RAM
DDR5
DDR4
DDR3
DDR2
关于本网站
Русский
English
Español
Português
Deutsch
Français
Italiano
Polski
中文
日本語
Samsung M4 70T5663CZ3-CE6 2GB
Crucial Technology CT8G4SFRA266.C8FD1 8GB
比较
Samsung M4 70T5663CZ3-CE6 2GB vs Crucial Technology CT8G4SFRA266.C8FD1 8GB
总分
Samsung M4 70T5663CZ3-CE6 2GB
总分
Crucial Technology CT8G4SFRA266.C8FD1 8GB
差异
规格
评论
差异
需要考虑的原因
Samsung M4 70T5663CZ3-CE6 2GB
报告一个错误
更快的读取速度,GB/s
3
15
测试中的平均数值
需要考虑的原因
Crucial Technology CT8G4SFRA266.C8FD1 8GB
报告一个错误
低于PassMark测试中的延时,ns
36
69
左右 -92% 更低的延时
更快的写入速度,GB/s
10.8
1,441.2
测试中的平均数值
更高的内存带宽,mbps
21300
5300
左右 4.02 更高的带宽
规格
完整的技术规格清单
Samsung M4 70T5663CZ3-CE6 2GB
Crucial Technology CT8G4SFRA266.C8FD1 8GB
主要特点
存储器类型
DDR2
DDR4
PassMark中的延时,ns
69
36
读取速度,GB/s
3,325.1
15.0
写入速度,GB/s
1,441.2
10.8
内存带宽,mbps
5300
21300
Other
描述
PC2-5300, SSTL 1.8V, CAS Supported: 3 4 5
PC4-21300, 1.2V, CAS Supported: 10 12 13 14 15 16 17 18 19 20
时序/时钟速度
5-5-5-15 / 667 MHz
17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
排名PassMark (越多越好)
525
2700
Samsung M4 70T5663CZ3-CE6 2GB RAM的比较
Samsung M4 70T5663QZ3-CE6 2GB
Nanya Technology NT2GT64U8HD0BN-3C 2GB
Crucial Technology CT8G4SFRA266.C8FD1 8GB RAM的比较
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Crucial Technology BLS4G4D240FSE.8FBD 4GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
最新比较
SK Hynix HMT41GS6AFR8A-PB 8GB
NSITEXE Inc Visenta 16GB
Wilk Elektronik S.A. GY1866D364L9A/4G 4GB
G Skill Intl F4-3000C15-8GRBB 8GB
SK Hynix HMT451U7BFR8C-RD 4GB
Samsung M393A4K40BB0-CPB 32GB
Crucial Technology BLE4G3D1608DE1TX0. 4GB
Wilk Elektronik S.A. IRX3200D464L16/16G 16GB
Samsung 1600 CL10 Series 8GB
Gold Key Technology Co Ltd GKE160SO102408-2933 16GB
Samsung M4 70T5663CZ3-CE6 2GB
Team Group Inc. TEAMGROUP-UD4-3200 8GB
Kingston KVT8FP-HYC 4GB
Crucial Technology BL8G36C16U4R.M8FE1 8GB
Samsung M378B5173BH0-CH9 4GB
G Skill Intl F4-4000C18-16GTRS 16GB
Samsung M393B1G70BH0-CK0 8GB
Patriot Memory (PDP Systems) PSD416G24002 16GB
Samsung M4 70T5663CZ3-CE6 2GB
Thermaltake Technology Co Ltd R009D408GX2-4600C19A 8GB
takeMS International AG TMS2GB264D082-805G 2GB
Micron Technology 16ATF2G64HZ-2G3A1 16GB
Apacer Technology AQD-D4U8GN24-SE 8GB
Micron Technology M471A1K43CB1-CTD 8GB
Kingston KTC1G-UDIMM 1GB
Kingston X5H5PW-MIB 8GB
Crucial Technology CT102464BD160B.M16 8GB
Lexar Co Limited LD4AU016G-H2666G 16GB
报告一个错误
×
Bug description
Source link