Samsung M4 70T5663CZ3-CE6 2GB vs Kingmax Semiconductor GLNH23F-18---------- 16GB

总分

Samsung M4 70T5663CZ3-CE6 2GB

Samsung M4 70T5663CZ3-CE6 2GB

总分

Kingmax Semiconductor GLNH23F-18---------- 16GB

Kingmax Semiconductor GLNH23F-18---------- 16GB

差异规格评论

差异

Samsung M4 70T5663CZ3-CE6 2GB

需要考虑的原因
Samsung M4 70T5663CZ3-CE6 2GB

报告一个错误

更快的读取速度，GB/s

3 16

测试中的平均数值

Kingmax Semiconductor GLNH23F-18---------- 16GB

需要考虑的原因
Kingmax Semiconductor GLNH23F-18---------- 16GB

报告一个错误

低于PassMark测试中的延时，ns

67 69

左右 -3% 更低的延时
更快的写入速度，GB/s

8.5 1,441.2

测试中的平均数值
更高的内存带宽，mbps

19200 5300

左右 3.62 更高的带宽

规格

完整的技术规格清单

Samsung M4 70T5663CZ3-CE6 2GB

Kingmax Semiconductor GLNH23F-18---------- 16GB

主要特点

存储器类型

DDR2 DDR4
PassMark中的延时，ns

69 67
读取速度，GB/s

3,325.1 16.0
写入速度，GB/s

1,441.2 8.5
内存带宽，mbps

5300 19200

Other

描述

PC2-5300, SSTL 1.8V, CAS Supported: 3 4 5 PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21
时序/时钟速度

5-5-5-15 / 667 MHz 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
排名PassMark (越多越好)

525 2030

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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Crucial Technology CT8G4SFS8266.C8FN 8GB

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SK Hynix HMT325S6BFR8C-H9 2GB

SK Hynix HMT325S6BFR8C-H9 2GB

G Skill Intl F4-3200C16-8GTZKY 8GB

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Kingston 9905403-061.A00LF 2GB

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Team Group Inc. TEAMGROUP-D4-3600 4GB

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Kingston ACR16D3LS1KBG/8G 8GB

Kingston ACR16D3LS1KBG/8G 8GB

Kingston MSI26D4S9S8HJ-8 8GB

Kingston MSI26D4S9S8HJ-8 8GB

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A-DATA Technology DQVE1908 512MB

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G Skill Intl F4-2400C15-8GFX 8GB