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Samsung M4 70T5663CZ3-CE6 2GB
Kingston 9965589-007.D01G 8GB

Samsung M4 70T5663CZ3-CE6 2GB vs Kingston 9965589-007.D01G 8GB

总分
star star star star star
Samsung M4 70T5663CZ3-CE6 2GB

Samsung M4 70T5663CZ3-CE6 2GB

总分
star star star star star
Kingston 9965589-007.D01G 8GB

Kingston 9965589-007.D01G 8GB

差异 规格 评论

差异

Samsung M4 70T5663CZ3-CE6 2GB 需要考虑的原因
Samsung M4 70T5663CZ3-CE6 2GB
报告一个错误
Kingston 9965589-007.D01G 8GB 需要考虑的原因
Kingston 9965589-007.D01G 8GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    35 left arrow 69
    左右 -97% 更低的延时
  • 更快的读取速度，GB/s
    9.1 left arrow 3
    测试中的平均数值
  • 更快的写入速度，GB/s
    7.6 left arrow 1,441.2
    测试中的平均数值
  • 更高的内存带宽，mbps
    17000 left arrow 5300
    左右 3.21 更高的带宽

规格

完整的技术规格清单
Samsung M4 70T5663CZ3-CE6 2GB
Kingston 9965589-007.D01G 8GB
主要特点
  • 存储器类型
    DDR2 left arrow DDR4
  • PassMark中的延时，ns
    69 left arrow 35
  • 读取速度，GB/s
    3,325.1 left arrow 9.1
  • 写入速度，GB/s
    1,441.2 left arrow 7.6
  • 内存带宽，mbps
    5300 left arrow 17000
Other
  • 描述
    PC2-5300, SSTL 1.8V, CAS Supported: 3 4 5 left arrow PC4-17000, 1.2V, CAS Supported: 9 11 12 13 14 15 16
  • 时序/时钟速度
    5-5-5-15 / 667 MHz left arrow 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
  • 排名PassMark (越多越好)
    525 left arrow 2078

Samsung M4 70T5663CZ3-CE6 2GB RAM的比较

Samsung M4 70T5663QZ3-CE6 2GB
Nanya Technology NT2GT64U8HD0BN-3C 2GB

Kingston 9965589-007.D01G 8GB RAM的比较

Kingston 9965669-018.A00G 16GB
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
RAM 2

最新比较

G Skill Intl F5-6400J3239G16G 16GB
G Skill Intl F5-6400J3239G16G 16GB
Micron Technology 4ATF1G64HZ-3G2B2 8GB
Micron Technology 4ATF1G64HZ-3G2B2 8GB
内存RAM
Samsung M378A1G43DB0-CPB 8GB
Samsung M378A1G43DB0-CPB 8GB
Hynix Semiconductor (Hyundai Electronics) GKE160UD102408-2133 16GB
Hynix Semiconductor (Hyundai Electronics) GKE160UD10240
内存RAM
Kingston 9965516-049.A00LF 8GB
Kingston 9965516-049.A00LF 8GB
Kingston HX426C16FB2/8-SP 8GB
Kingston HX426C16FB2/8-SP 8GB
内存RAM
Kingston 9905702-010.A00G 8GB
Kingston 9905702-010.A00G 8GB
Crucial Technology BLS8G4D26BFSBK.8FBR 8GB
Crucial Technology BLS8G4D26BFSBK.8FBR 8GB
内存RAM
Samsung M393B1K70CH0-CH9 8GB
Samsung M393B1K70CH0-CH9 8GB
Crucial Technology CT16G4SFD824A.M16FA 16GB
Crucial Technology CT16G4SFD824A.M16FA 16GB
内存RAM
Samsung M4 70T5663CZ3-CE6 2GB
Samsung M4 70T5663CZ3-CE6 2GB
Kingston 9965589-007.D01G 8GB
Kingston 9965589-007.D01G 8GB
内存RAM
Kingston 99U5458-008.A00LF 4GB
Kingston 99U5458-008.A00LF 4GB
Kingston 9905599-025.A00G 8GB
Kingston 9905599-025.A00G 8GB
内存RAM
Kingston 99U5595-005.A00LF 2GB
Kingston 99U5595-005.A00LF 2GB
Crucial Technology BLM16G40C18U4BL.M8FB 16GB
Crucial Technology BLM16G40C18U4BL.M8FB 16GB
内存RAM
Samsung M378B5673FH0-CH9 2GB
Samsung M378B5673FH0-CH9 2GB
Corsair CMK16GX4M4A2666C16 4GB
Corsair CMK16GX4M4A2666C16 4GB
内存RAM
Nanya Technology M2X4G64CB8HG9N-DG 4GB
Nanya Technology M2X4G64CB8HG9N-DG 4GB
Crucial Technology BLS4G4D26BFSC.8FBR2 4GB
Crucial Technology BLS4G4D26BFSC.8FBR2 4GB
内存RAM
Elpida EBJ81UG8BBU0-GN-F 8GB
Elpida EBJ81UG8BBU0-GN-F 8GB
A-DATA Technology AO1P24HC4R1-BUYS 4GB
A-DATA Technology AO1P24HC4R1-BUYS 4GB
内存RAM
Kingston 99U5584-007.A00LF 4GB
Kingston 99U5584-007.A00LF 4GB
Golden Empire CL15-15-15 D4-2133 8GB
Golden Empire CL15-15-15 D4-2133 8GB
内存RAM
G Skill Intl F3-14900CL8-4GBXM 4GB
G Skill Intl F3-14900CL8-4GBXM 4GB
Panram International Corporation PUD43000C168G2NJR 8GB
Panram International Corporation PUD43000C168G2NJR 8GB
内存RAM
SK Hynix HMT325S6BFR8C-H9 2GB
SK Hynix HMT325S6BFR8C-H9 2GB
Corsair CMK64GX4M8X3600C18 8GB
Corsair CMK64GX4M8X3600C18 8GB
内存RAM