Samsung M4 70T5663CZ3-CE6 2GB vs Patriot Memory (PDP Systems) 3866 C18 Series 8GB

总分

Samsung M4 70T5663CZ3-CE6 2GB

Samsung M4 70T5663CZ3-CE6 2GB

总分

Patriot Memory (PDP Systems) 3866 C18 Series 8GB

Patriot Memory (PDP Systems) 3866 C18 Series 8GB

差异规格评论

差异

Samsung M4 70T5663CZ3-CE6 2GB

需要考虑的原因
Samsung M4 70T5663CZ3-CE6 2GB

报告一个错误

更快的读取速度，GB/s

3 20.9

测试中的平均数值

Patriot Memory (PDP Systems) 3866 C18 Series 8GB

需要考虑的原因
Patriot Memory (PDP Systems) 3866 C18 Series 8GB

报告一个错误

低于PassMark测试中的延时，ns

22 69

左右 -214% 更低的延时
更快的写入速度，GB/s

18.5 1,441.2

测试中的平均数值
更高的内存带宽，mbps

17000 5300

左右 3.21 更高的带宽

规格

完整的技术规格清单

Samsung M4 70T5663CZ3-CE6 2GB

Patriot Memory (PDP Systems) 3866 C18 Series 8GB

主要特点

存储器类型

DDR2 DDR4
PassMark中的延时，ns

69 22
读取速度，GB/s

3,325.1 20.9
写入速度，GB/s

1,441.2 18.5
内存带宽，mbps

5300 17000

Other

描述

PC2-5300, SSTL 1.8V, CAS Supported: 3 4 5 PC4-17000, 1.2V, CAS Supported: 10 11 12 13 14 15 16
时序/时钟速度

5-5-5-15 / 667 MHz 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)

525 4324

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

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RAM 2

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Frequency (Mhz) *

Absolute Latency

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最新比较

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Gloway International Co. Ltd. TYP4U3200E16082C 8GB

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Samsung M4 70T5663CZ3-CE6 2GB

Samsung M4 70T5663CZ3-CE6 2GB

Patriot Memory (PDP Systems) 3866 C18 Series 8GB

Patriot Memory (PDP Systems) 3866 C18 Series 8GB

Samsung DDR3 8GB 1600MHz 8GB

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G Skill Intl F4-3200C14-8GTZKO 8GB

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Samsung M471B5273EB0-CK0 4GB

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Samsung M378A1K43BB2-CRC 8GB

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Apacer Technology 78.C1GMM.AUC0B 8GB

Golden Empire 1GB DDR2 800 CAS=4 1GB

Golden Empire 1GB DDR2 800 CAS=4 1GB

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Corsair CMD16GX4M4B3200C16-R 4GB

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A-DATA Technology AD73I1C1674EV 4GB

Good Wealth Technology Ltd. 8GB

Good Wealth Technology Ltd. 8GB

Smart Modular SH564128FH8NZQNSCG 4GB

Smart Modular SH564128FH8NZQNSCG 4GB

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Kingston 9905734-102.A00G 32GB

Samsung M378B5773DH0-CH9 2GB

Samsung M378B5773DH0-CH9 2GB

Samsung M393A2K43BB1-CRCA1 16GB

Samsung M393A2K43BB1-CRCA1 16GB