Samsung M4 70T5663CZ3-CE6 2GB vs Samsung M378A1K43BB2-CTD 8GB

总分

Samsung M4 70T5663CZ3-CE6 2GB

Samsung M4 70T5663CZ3-CE6 2GB

总分

Samsung M378A1K43BB2-CTD 8GB

Samsung M378A1K43BB2-CTD 8GB

差异规格评论

差异

Samsung M4 70T5663CZ3-CE6 2GB

需要考虑的原因
Samsung M4 70T5663CZ3-CE6 2GB

报告一个错误

更快的读取速度，GB/s

3 17.9

测试中的平均数值

Samsung M378A1K43BB2-CTD 8GB

需要考虑的原因
Samsung M378A1K43BB2-CTD 8GB

报告一个错误

低于PassMark测试中的延时，ns

21 69

左右 -229% 更低的延时
更快的写入速度，GB/s

13.8 1,441.2

测试中的平均数值
更高的内存带宽，mbps

21300 5300

左右 4.02 更高的带宽

规格

完整的技术规格清单

Samsung M4 70T5663CZ3-CE6 2GB

Samsung M378A1K43BB2-CTD 8GB

主要特点

存储器类型

DDR2 DDR4
PassMark中的延时，ns

69 21
读取速度，GB/s

3,325.1 17.9
写入速度，GB/s

1,441.2 13.8
内存带宽，mbps

5300 21300

Other

描述

PC2-5300, SSTL 1.8V, CAS Supported: 3 4 5 PC4-21300, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20
时序/时钟速度

5-5-5-15 / 667 MHz 17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
排名PassMark (越多越好)

525 3167

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

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Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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Kingston 9905700-053.A00G 8GB

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Kingston ACR256X64D3S1333C9 2GB

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Team Group Inc. TEAMGROUP-UD4-2400 8GB

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Crucial Technology BLS4G4D26BFSC.8FB 4GB

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Samsung M4 70T5663CZ3-CE6 2GB

Samsung M4 70T5663CZ3-CE6 2GB

Samsung M378A1K43BB2-CTD 8GB

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Corsair CM3X8GA2400C11Y2R 8GB

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Corsair CMD16GX4M2A2666C15 8GB

Kingmax Semiconductor FLFE85F-C8KL9 2GB

Kingmax Semiconductor FLFE85F-C8KL9 2GB

Kingston 9905630-052.A00G 16GB

Kingston 9905630-052.A00G 16GB

SK Hynix HMT325S6CFR8C-PB 2GB

SK Hynix HMT325S6CFR8C-PB 2GB

Corsair CMK32GX4M4D3600C18 8GB

Corsair CMK32GX4M4D3600C18 8GB

Nanya Technology M2X4G64CB8HG9N-DG 4GB

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Maxsun MSD48G26Q3 8GB

Maxsun MSD48G26Q3 8GB

A-DATA Technology AD5U48008G-B 8GB

A-DATA Technology AD5U48008G-B 8GB

Crucial Technology BL8G36C16U4BL.M8FE1 8GB

Crucial Technology BL8G36C16U4BL.M8FE1 8GB