Samsung M4 70T5663CZ3-CE6 2GB vs SK Hynix HMA41GR7AFR8N-UH 8GB

总分

Samsung M4 70T5663CZ3-CE6 2GB

Samsung M4 70T5663CZ3-CE6 2GB

总分

SK Hynix HMA41GR7AFR8N-UH 8GB

SK Hynix HMA41GR7AFR8N-UH 8GB

差异规格评论

差异

Samsung M4 70T5663CZ3-CE6 2GB

需要考虑的原因
Samsung M4 70T5663CZ3-CE6 2GB

报告一个错误

更快的读取速度，GB/s

3 11.1

测试中的平均数值

SK Hynix HMA41GR7AFR8N-UH 8GB

需要考虑的原因
SK Hynix HMA41GR7AFR8N-UH 8GB

报告一个错误

低于PassMark测试中的延时，ns

46 69

左右 -50% 更低的延时
更快的写入速度，GB/s

8.1 1,441.2

测试中的平均数值
更高的内存带宽，mbps

19200 5300

左右 3.62 更高的带宽

规格

完整的技术规格清单

Samsung M4 70T5663CZ3-CE6 2GB

SK Hynix HMA41GR7AFR8N-UH 8GB

主要特点

存储器类型

DDR2 DDR4
PassMark中的延时，ns

69 46
读取速度，GB/s

3,325.1 11.1
写入速度，GB/s

1,441.2 8.1
内存带宽，mbps

5300 19200

Other

描述

PC2-5300, SSTL 1.8V, CAS Supported: 3 4 5 PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18
时序/时钟速度

5-5-5-15 / 667 MHz 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
排名PassMark (越多越好)

525 2388

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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Micron Technology 8ATF2G64HZ-3G2E2 16GB

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SK Hynix HMA81GU6DJR8N-VK 8GB

Kingston HP37D4U1S8ME-8XR 8GB

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Kingston KF3733C19D4/16GX 16GB

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Kingston 99U5471-012.A00LF 4GB

Crucial Technology BLS16G4D26BFST.16FD 16GB

Crucial Technology BLS16G4D26BFST.16FD 16GB