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Samsung M4 70T5663EH3-CF7 2GB
A-DATA Technology ADOVF1A083FE 1GB

Samsung M4 70T5663EH3-CF7 2GB vs A-DATA Technology ADOVF1A083FE 1GB

总分
star star star star star
Samsung M4 70T5663EH3-CF7 2GB

Samsung M4 70T5663EH3-CF7 2GB

总分
star star star star star
A-DATA Technology ADOVF1A083FE 1GB

A-DATA Technology ADOVF1A083FE 1GB

差异 规格 评论

差异

Samsung M4 70T5663EH3-CF7 2GB 需要考虑的原因
Samsung M4 70T5663EH3-CF7 2GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    66 left arrow 70
    左右 6% 更低的延时
  • 更快的读取速度，GB/s
    4 left arrow 3
    测试中的平均数值
  • 更快的写入速度，GB/s
    1,906.1 left arrow 1,349.3
    测试中的平均数值
A-DATA Technology ADOVF1A083FE 1GB 需要考虑的原因
A-DATA Technology ADOVF1A083FE 1GB
报告一个错误

规格

完整的技术规格清单
Samsung M4 70T5663EH3-CF7 2GB
A-DATA Technology ADOVF1A083FE 1GB
主要特点
  • 存储器类型
    DDR2 left arrow DDR2
  • PassMark中的延时，ns
    66 left arrow 70
  • 读取速度，GB/s
    4,323.0 left arrow 3,101.5
  • 写入速度，GB/s
    1,906.1 left arrow 1,349.3
  • 内存带宽，mbps
    6400 left arrow 6400
Other
  • 描述
    PC2-6400, SSTL 1.8V, CAS Supported: 4 5 6 left arrow PC2-6400, SSTL 1.8V, CAS Supported: 4 5 6
  • 时序/时钟速度
    5-5-5-15 / 800 MHz left arrow 5-5-5-15 / 800 MHz
  • 排名PassMark (越多越好)
    703 left arrow 412

Samsung M4 70T5663EH3-CF7 2GB RAM的比较

Samsung M4 70T5663QZ3-CF7 2GB
Corsair CM4X8GE2666C16K4 8GB

A-DATA Technology ADOVF1A083FE 1GB RAM的比较

Elpida EBE21UE8ACUA-8G-E 2GB
Samsung M4 70T2953EZ3-CE6 1GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
RAM 2

最新比较

Samsung M4 70T5663EH3-CF7 2GB
Samsung M4 70T5663EH3-CF7 2GB
A-DATA Technology ADOVF1A083FE 1GB
A-DATA Technology ADOVF1A083FE 1GB
内存RAM
Samsung M386B4G70DM0-CMA4 32GB
Samsung M386B4G70DM0-CMA4 32GB
Team Group Inc. TEAMGROUP-D4-3600 4GB
Team Group Inc. TEAMGROUP-D4-3600 4GB
内存RAM
Samsung M386B4G70DM0-CMA4 32GB
Samsung M386B4G70DM0-CMA4 32GB
Kingston 9905701-006.A00G 16GB
Kingston 9905701-006.A00G 16GB
内存RAM
Kingston 9905403-011.A03LF 2GB
Kingston 9905403-011.A03LF 2GB
Apacer Technology 78.D1GMM.AU10B 16GB
Apacer Technology 78.D1GMM.AU10B 16GB
内存RAM
Patriot Memory (PDP Systems) PSD38G1600L2S 8GB
Patriot Memory (PDP Systems) PSD38G1600L2S 8GB
Asgard VMA42UH-MEC1U2AJ2 16GB
Asgard VMA42UH-MEC1U2AJ2 16GB
内存RAM
Samsung M378A1G43DB0-CPB 8GB
Samsung M378A1G43DB0-CPB 8GB
G Skill Intl F4-4000C18-8GTRG 8GB
G Skill Intl F4-4000C18-8GTRG 8GB
内存RAM
Nanya Technology NT4GC72B4NA1NL-CG 4GB
Nanya Technology NT4GC72B4NA1NL-CG 4GB
G Skill Intl F4-2800C14-16GTZ 16GB
G Skill Intl F4-2800C14-16GTZ 16GB
内存RAM
Corsair CMY8GX3M2A2666C10 4GB
Corsair CMY8GX3M2A2666C10 4GB
Samsung M378A1K43BB2-CTD 8GB
Samsung M378A1K43BB2-CTD 8GB
内存RAM
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
Hynix Semiconductor (Hyundai Electronics) GKE160SO10240
Kingston 9905701-008.A00G 16GB
Kingston 9905701-008.A00G 16GB
内存RAM
A-DATA Technology ADOVE1A0834E 1GB
A-DATA Technology ADOVE1A0834E 1GB
A-DATA Technology ADOVE1B163BE 2GB
A-DATA Technology ADOVE1B163BE 2GB
内存RAM
SK Hynix HMT325S6CFR8C-PB 2GB
SK Hynix HMT325S6CFR8C-PB 2GB
G Skill Intl F4-2400C16-8GIS 8GB
G Skill Intl F4-2400C16-8GIS 8GB
内存RAM
Crucial Technology BLT2G3D1608DT1TX0 2GB
Crucial Technology BLT2G3D1608DT1TX0 2GB
A-DATA Technology AO1P26KC8T1-BXPS 8GB
A-DATA Technology AO1P26KC8T1-BXPS 8GB
内存RAM
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
G Skill Intl F4-3000C14-16GVRD 16GB
G Skill Intl F4-3000C14-16GVRD 16GB
内存RAM
PNY Electronics PNY 2GB
PNY Electronics PNY 2GB
Apacer Technology 78.C1GS7.AUW0B 8GB
Apacer Technology 78.C1GS7.AUW0B 8GB
内存RAM