Samsung M4 70T5663QH3-CF7 2GB vs Elpida EBE21UE8ACUA-8G-E 2GB

总分

Samsung M4 70T5663QH3-CF7 2GB

Samsung M4 70T5663QH3-CF7 2GB

总分

Elpida EBE21UE8ACUA-8G-E 2GB

Elpida EBE21UE8ACUA-8G-E 2GB

差异规格评论

差异

Samsung M4 70T5663QH3-CF7 2GB

需要考虑的原因
Samsung M4 70T5663QH3-CF7 2GB

报告一个错误

低于PassMark测试中的延时，ns

46 58

左右 21% 更低的延时
更快的读取速度，GB/s

5 4

测试中的平均数值
更快的写入速度，GB/s

2,264.2 2,001.3

测试中的平均数值

Elpida EBE21UE8ACUA-8G-E 2GB

需要考虑的原因
Elpida EBE21UE8ACUA-8G-E 2GB

报告一个错误

规格

完整的技术规格清单

Samsung M4 70T5663QH3-CF7 2GB

Elpida EBE21UE8ACUA-8G-E 2GB

主要特点

存储器类型

DDR2 DDR2
PassMark中的延时，ns

46 58
读取速度，GB/s

5,243.1 4,796.5
写入速度，GB/s

2,264.2 2,001.3
内存带宽，mbps

6400 6400

Other

描述

PC2-6400, SSTL 1.8V, CAS Supported: 4 5 6 PC2-6400, SSTL 1.8V, CAS Supported: 4 5 6
时序/时钟速度

5-5-5-15 / 800 MHz 5-5-5-15 / 800 MHz
排名PassMark (越多越好)

775 768

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

最新比较

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Corsair CM4B4G1J2400A14K 4GB

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Corsair CMD16GX3M2A1866C9 8GB

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Chun Well Technology Holding Limited MD4U0840180BCW 8GB

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Kingston KP6FH5-MIE 32GB

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Kingston 9905711-002.A00G 4GB

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Kingston ACR256X64D3S1333C9 2GB

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Mushkin 99[2/7/4]204F 4GB

Mushkin 99[2/7/4]204F 4GB

Kingston 9965525-018.A00LF 4GB

Kingston 9965525-018.A00LF 4GB

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