Samsung M4 70T5663QZ3-CE6 2GB vs Corsair CMK16GX4M2F4400C19 8GB

总分

Samsung M4 70T5663QZ3-CE6 2GB

Samsung M4 70T5663QZ3-CE6 2GB

总分

Corsair CMK16GX4M2F4400C19 8GB

Corsair CMK16GX4M2F4400C19 8GB

差异规格评论

差异

Samsung M4 70T5663QZ3-CE6 2GB

需要考虑的原因
Samsung M4 70T5663QZ3-CE6 2GB

报告一个错误

更快的读取速度，GB/s

3 21.7

测试中的平均数值

Corsair CMK16GX4M2F4400C19 8GB

需要考虑的原因
Corsair CMK16GX4M2F4400C19 8GB

报告一个错误

低于PassMark测试中的延时，ns

16 68

左右 -325% 更低的延时
更快的写入速度，GB/s

17.8 1,702.6

测试中的平均数值
更高的内存带宽，mbps

17000 5300

左右 3.21 更高的带宽

规格

完整的技术规格清单

Samsung M4 70T5663QZ3-CE6 2GB

Corsair CMK16GX4M2F4400C19 8GB

主要特点

存储器类型

DDR2 DDR4
PassMark中的延时，ns

68 16
读取速度，GB/s

3,886.6 21.7
写入速度，GB/s

1,702.6 17.8
内存带宽，mbps

5300 17000

Other

描述

PC2-5300, SSTL 1.8V, CAS Supported: 3 4 5 PC4-17000, 1.2V, CAS Supported: 9 10 11 12 13 14 15 16
时序/时钟速度

5-5-5-15 / 667 MHz 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)

654 3872

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

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RAM 2

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Absolute Latency

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Kingston HP32D4U8D8HC-16X 16GB

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Samsung M393B1K70QB0-CK0 8GB

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Shenzhen Micro Innovation Industry KF3200DDCD4 16GB

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Qimonda 64T128020EDL2.5C2 1GB

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G Skill Intl F4-4000C16-8GTZR 8GB

G Skill Intl F4-4000C16-8GTZR 8GB

Samsung M393B2G70BH0-CK0 16GB

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G Skill Intl F4-3000C16-8GSXWB 8GB

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Hexon Technology Pte Ltd HEXON 1GB

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JUHOR JHD3000U1908JG 8GB

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Essencore Limited IM4AGU88N26-GIIHA0 16GB

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Samsung M378B5173BH0-CH9 4GB

OM Nanotech Pvt.Ltd V1D4S816GB2G82G83200 16GB

OM Nanotech Pvt.Ltd V1D4S816GB2G82G83200 16GB

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Nanya Technology NT512T64U88B0BY-3C 512MB

Kingston KF3000C16D4/32GX 32GB

Kingston KF3000C16D4/32GX 32GB

A-DATA Technology AM2U16BC4P2-B05B 4GB

A-DATA Technology AM2U16BC4P2-B05B 4GB

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Eudar Technology Inc. 8GXMP3000CL16 8GB

PNY Electronics PNY 2GB

PNY Electronics PNY 2GB

Corsair CM4X16GE2666Z16K4 16GB

Corsair CM4X16GE2666Z16K4 16GB

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Nanya Technology M2X4G64CB8HG9N-DG 4GB

Corsair CMD64GX4M8B2800C14 8GB

Corsair CMD64GX4M8B2800C14 8GB