Samsung M4 70T5663QZ3-CE6 2GB vs Kingston KV0M5R-HYD 8GB

总分

Samsung M4 70T5663QZ3-CE6 2GB

Samsung M4 70T5663QZ3-CE6 2GB

总分

Kingston KV0M5R-HYD 8GB

Kingston KV0M5R-HYD 8GB

差异规格评论

差异

Samsung M4 70T5663QZ3-CE6 2GB

需要考虑的原因
Samsung M4 70T5663QZ3-CE6 2GB

报告一个错误

更快的读取速度，GB/s

3 13.3

测试中的平均数值

Kingston KV0M5R-HYD 8GB

需要考虑的原因
Kingston KV0M5R-HYD 8GB

报告一个错误

低于PassMark测试中的延时，ns

48 68

左右 -42% 更低的延时
更快的写入速度，GB/s

8.5 1,702.6

测试中的平均数值
更高的内存带宽，mbps

25600 5300

左右 4.83 更高的带宽

规格

完整的技术规格清单

Samsung M4 70T5663QZ3-CE6 2GB

Kingston KV0M5R-HYD 8GB

主要特点

存储器类型

DDR2 DDR4
PassMark中的延时，ns

68 48
读取速度，GB/s

3,886.6 13.3
写入速度，GB/s

1,702.6 8.5
内存带宽，mbps

5300 25600

Other

描述

PC2-5300, SSTL 1.8V, CAS Supported: 3 4 5 PC4-25600, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21 22 24
时序/时钟速度

5-5-5-15 / 667 MHz 20-20-20, 22-22-22, 24-24-24 / 3200 MHz
排名PassMark (越多越好)

654 2398

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

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Absolute Latency

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RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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SK Hynix HMT325S6CFR8C-PB 2GB

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G Skill Intl F3-10600CL9-2GBNT 2GB

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Corsair CMZ16GX3M2A2400C10 8GB

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Apacer Technology 76.D105G.D090B 16GB

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Samsung M393B1G70BH0-YK0 8GB

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Crucial Technology CT16G4DFD824A.C16FDD 16GB

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SK Hynix HMT325S6CFR8C-PB 2GB

SK Hynix HMT325S6CFR8C-PB 2GB

Avant Technology W6451U66J7240ND 4GB

Avant Technology W6451U66J7240ND 4GB

Samsung M471B5273EB0-CK0 4GB

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Smart Modular SF4642G8CK8I8HLSBG 16GB

Smart Modular SF4642G8CK8I8HLSBG 16GB

Micron Technology 8JSF25664HZ-1G4D1 2GB

Micron Technology 8JSF25664HZ-1G4D1 2GB

Crucial Technology CT16G4DFD8266.C16FN 16GB

Crucial Technology CT16G4DFD8266.C16FN 16GB

A-DATA Technology DQVE1908 512MB

A-DATA Technology DQVE1908 512MB

Hynix Semiconductor (Hyundai Electronics) HMA81GS6JJR8N-VK 8GB

Hynix Semiconductor (Hyundai Electronics) HMA81GS6JJR8N