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Samsung M4 70T5663QZ3-CE6 2GB
Shenzhen Chuangshifeida Technology DERLER 16GB2666MHz 16GB

Samsung M4 70T5663QZ3-CE6 2GB vs Shenzhen Chuangshifeida Technology DERLER 16GB2666MHz 16GB

总分
star star star star star
Samsung M4 70T5663QZ3-CE6 2GB

Samsung M4 70T5663QZ3-CE6 2GB

总分
star star star star star
Shenzhen Chuangshifeida Technology DERLER 16GB2666MHz 16GB

Shenzhen Chuangshifeida Technology DERLER 16GB2666MHz 16GB

差异 规格 评论

差异

Samsung M4 70T5663QZ3-CE6 2GB 需要考虑的原因
Samsung M4 70T5663QZ3-CE6 2GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    68 left arrow 86
    左右 21% 更低的延时
  • 更快的读取速度，GB/s
    3 left arrow 14.3
    测试中的平均数值
Shenzhen Chuangshifeida Technology DERLER 16GB2666MHz 16GB 需要考虑的原因
Shenzhen Chuangshifeida Technology DERLER 16GB2666MHz 16GB
报告一个错误
  • 更快的写入速度，GB/s
    8.1 left arrow 1,702.6
    测试中的平均数值
  • 更高的内存带宽，mbps
    21300 left arrow 5300
    左右 4.02 更高的带宽

规格

完整的技术规格清单
Samsung M4 70T5663QZ3-CE6 2GB
Shenzhen Chuangshifeida Technology DERLER 16GB2666MHz 16GB
主要特点
  • 存储器类型
    DDR2 left arrow DDR4
  • PassMark中的延时，ns
    68 left arrow 86
  • 读取速度，GB/s
    3,886.6 left arrow 14.3
  • 写入速度，GB/s
    1,702.6 left arrow 8.1
  • 内存带宽，mbps
    5300 left arrow 21300
Other
  • 描述
    PC2-5300, SSTL 1.8V, CAS Supported: 3 4 5 left arrow PC4-21300, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21 22 23
  • 时序/时钟速度
    5-5-5-15 / 667 MHz left arrow 17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
  • 排名PassMark (越多越好)
    654 left arrow 1658

Samsung M4 70T5663QZ3-CE6 2GB RAM的比较

SK Hynix HYMP125U64CP8-S6 2GB
Hynix Semiconductor (Hyundai Electronics) HYMP125S64CP8-Y5 2GB

Shenzhen Chuangshifeida Technology DERLER 16GB2666MHz 16GB RAM的比较

STEC (Silicon Tech) S1024R3NN2QK-I 1GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
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最新比较

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Samsung M4 70T5663QZ3-CE6 2GB
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