Samsung M4 70T5663QZ3-CE6 2GB vs Smart Modular SF4641G8CK8I8GKSBG 8GB

总分

Samsung M4 70T5663QZ3-CE6 2GB

Samsung M4 70T5663QZ3-CE6 2GB

总分

Smart Modular SF4641G8CK8I8GKSBG 8GB

Smart Modular SF4641G8CK8I8GKSBG 8GB

差异规格评论

差异

Samsung M4 70T5663QZ3-CE6 2GB

需要考虑的原因
Samsung M4 70T5663QZ3-CE6 2GB

报告一个错误

更快的读取速度，GB/s

3 16

测试中的平均数值

Smart Modular SF4641G8CK8I8GKSBG 8GB

需要考虑的原因
Smart Modular SF4641G8CK8I8GKSBG 8GB

报告一个错误

低于PassMark测试中的延时，ns

35 68

左右 -94% 更低的延时
更快的写入速度，GB/s

11.8 1,702.6

测试中的平均数值
更高的内存带宽，mbps

19200 5300

左右 3.62 更高的带宽

规格

完整的技术规格清单

Samsung M4 70T5663QZ3-CE6 2GB

Smart Modular SF4641G8CK8I8GKSBG 8GB

主要特点

存储器类型

DDR2 DDR4
PassMark中的延时，ns

68 35
读取速度，GB/s

3,886.6 16.0
写入速度，GB/s

1,702.6 11.8
内存带宽，mbps

5300 19200

Other

描述

PC2-5300, SSTL 1.8V, CAS Supported: 3 4 5 PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18
时序/时钟速度

5-5-5-15 / 667 MHz 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
排名PassMark (越多越好)

654 2824

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

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Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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Crucial Technology CB8GU2400.C8D 8GB

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Micron Technology 8ATF51264AZ-2G1B1 4GB

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G Skill Intl F3-2133C9-4GAB 4GB

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Patriot Memory (PDP Systems) PSD416G24002S 16GB

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Elpida EBJ17RG4EFWA-DJ-F 16GB

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Samsung M378B5673FH0-CH9 2GB

Samsung M378B5673FH0-CH9 2GB

Crucial Technology CT8G4DFS8213.M8FH 8GB

Crucial Technology CT8G4DFS8213.M8FH 8GB

SK Hynix CT51264AC800.C16FC 4GB

SK Hynix CT51264AC800.C16FC 4GB

Essencore Limited IMA41GU6MFR8N-CF0 8GB

Essencore Limited IMA41GU6MFR8N-CF0 8GB

SK Hynix HMT41GU7BFR8A-PB 8GB

SK Hynix HMT41GU7BFR8A-PB 8GB

Wilk Elektronik S.A. IRP4000D4V64L18S/8G 8GB

Wilk Elektronik S.A. IRP4000D4V64L18S/8G 8GB