Samsung M471A1K43BB1-CTD 8GB vs Samsung M471A1K43DB1-CTD 8GB

总分

Samsung M471A1K43BB1-CTD 8GB

Samsung M471A1K43BB1-CTD 8GB

总分

Samsung M471A1K43DB1-CTD 8GB

Samsung M471A1K43DB1-CTD 8GB

差异规格评论

差异

Samsung M471A1K43BB1-CTD 8GB

需要考虑的原因
Samsung M471A1K43BB1-CTD 8GB

报告一个错误

低于PassMark测试中的延时，ns

34 35

左右 3% 更低的延时
更快的写入速度，GB/s

13.1 11.8

测试中的平均数值

Samsung M471A1K43DB1-CTD 8GB

需要考虑的原因
Samsung M471A1K43DB1-CTD 8GB

报告一个错误

更快的读取速度，GB/s

15.7 14.9

测试中的平均数值

规格

完整的技术规格清单

Samsung M471A1K43BB1-CTD 8GB

Samsung M471A1K43DB1-CTD 8GB

主要特点

存储器类型

DDR4 DDR4
PassMark中的延时，ns

34 35
读取速度，GB/s

14.9 15.7
写入速度，GB/s

13.1 11.8
内存带宽，mbps

21300 21300

Other

描述

PC4-21300, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 PC4-21300, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20
时序/时钟速度

17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz 17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
排名PassMark (越多越好)

2780 2767

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

最新比较

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A-DATA Technology DOVF1B163G2G 2GB

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Corsair CMK8GX4M1A2666C16 8GB

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Samsung M378B5673FH0-CH9 2GB

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Gloway International (HK) STKD4GAM2400-F 8GB

Samsung M3 78T5663RZ3-CF7 2GB

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Kingmax Semiconductor GLNG43F-18---------- 8GB

Kingmax Semiconductor GLNG43F-18---------- 8GB

SK Hynix HMT151R7TFR4C-H9 4GB

SK Hynix HMT151R7TFR4C-H9 4GB

G Skill Intl F4-3200C16-4GRKD 4GB

G Skill Intl F4-3200C16-4GRKD 4GB

G Skill Intl F3-1866C8-8GTX 8GB

G Skill Intl F3-1866C8-8GTX 8GB

G Skill Intl F4-3600C14-16GVK 16GB

G Skill Intl F4-3600C14-16GVK 16GB