Samsung M471A1K43DB1-CTD 8GB vs G Skill Intl F4-3200C14-16GTRS 16GB

总分

Samsung M471A1K43DB1-CTD 8GB

Samsung M471A1K43DB1-CTD 8GB

总分

G Skill Intl F4-3200C14-16GTRS 16GB

G Skill Intl F4-3200C14-16GTRS 16GB

差异规格评论

差异

Samsung M471A1K43DB1-CTD 8GB

需要考虑的原因
Samsung M471A1K43DB1-CTD 8GB

报告一个错误

更高的内存带宽，mbps

21300 17000

左右 1.25% 更高的带宽

G Skill Intl F4-3200C14-16GTRS 16GB

需要考虑的原因
G Skill Intl F4-3200C14-16GTRS 16GB

报告一个错误

低于PassMark测试中的延时，ns

24 35

左右 -46% 更低的延时
更快的读取速度，GB/s

20.5 15.7

测试中的平均数值
更快的写入速度，GB/s

17.0 11.8

测试中的平均数值

规格

完整的技术规格清单

Samsung M471A1K43DB1-CTD 8GB

G Skill Intl F4-3200C14-16GTRS 16GB

主要特点

存储器类型

DDR4 DDR4
PassMark中的延时，ns

35 24
读取速度，GB/s

15.7 20.5
写入速度，GB/s

11.8 17.0
内存带宽，mbps

21300 17000

Other

描述

PC4-21300, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 PC4-17000, 1.2V, CAS Supported: 10 11 12 13 14 15 16
时序/时钟速度

17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)

2767 4064

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

最新比较

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Hewlett-Packard 7EH99AA# 16GB

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Kingston 99U5474-010.A00LF 2GB

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Panram International Corporation D4N2400PS-8G 8GB

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Crucial Technology CT16G4SFD832A.M16FJ 16GB

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Crucial Technology CT16G4SFD832A.M16FRS 16GB

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Kingmax Semiconductor GLLG42F-DA---------- 8GB

Kingmax Semiconductor GLLG42F-DA---------- 8GB

Samsung M3 93T5750CZA-CE6 2GB

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G Skill Intl F4-3200C16-8GIS 8GB

G Skill Intl F4-3200C16-8GIS 8GB

Elpida EBJ40UG8EFU0-GN-F 4GB

Elpida EBJ40UG8EFU0-GN-F 4GB

Corsair CM4X16GD3200C16K2E 16GB

Corsair CM4X16GD3200C16K2E 16GB

Kingston 2GB-DDR2 800Mhz 2GB

Kingston 2GB-DDR2 800Mhz 2GB

Mushkin MRA4S300GJJM16G 16GB

Mushkin MRA4S300GJJM16G 16GB

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SK Hynix HMT451S6BFR8A-PB 4GB

Terabyte Co Ltd RCX2-16G3600A 8GB

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