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Samsung M471A1K43DB1-CTD 8GB
G Skill Intl F4-4000C17-16GVKB 16GB

Samsung M471A1K43DB1-CTD 8GB vs G Skill Intl F4-4000C17-16GVKB 16GB

总分
star star star star star
Samsung M471A1K43DB1-CTD 8GB

Samsung M471A1K43DB1-CTD 8GB

总分
star star star star star
G Skill Intl F4-4000C17-16GVKB 16GB

G Skill Intl F4-4000C17-16GVKB 16GB

差异 规格 评论

差异

Samsung M471A1K43DB1-CTD 8GB 需要考虑的原因
Samsung M471A1K43DB1-CTD 8GB
报告一个错误
  • 更高的内存带宽，mbps
    21300 left arrow 17000
    左右 1.25% 更高的带宽
G Skill Intl F4-4000C17-16GVKB 16GB 需要考虑的原因
G Skill Intl F4-4000C17-16GVKB 16GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    27 left arrow 35
    左右 -30% 更低的延时
  • 更快的读取速度，GB/s
    22.7 left arrow 15.7
    测试中的平均数值
  • 更快的写入速度，GB/s
    18.5 left arrow 11.8
    测试中的平均数值

规格

完整的技术规格清单
Samsung M471A1K43DB1-CTD 8GB
G Skill Intl F4-4000C17-16GVKB 16GB
主要特点
  • 存储器类型
    DDR4 left arrow DDR4
  • PassMark中的延时，ns
    35 left arrow 27
  • 读取速度，GB/s
    15.7 left arrow 22.7
  • 写入速度，GB/s
    11.8 left arrow 18.5
  • 内存带宽，mbps
    21300 left arrow 17000
Other
  • 描述
    PC4-21300, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 left arrow PC4-17000, 1.2V, CAS Supported: 10 11 12 13 14 15 16
  • 时序/时钟速度
    17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz left arrow 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
  • 排名PassMark (越多越好)
    2767 left arrow 4177

Samsung M471A1K43DB1-CTD 8GB RAM的比较

Crucial Technology CT8G4SFS632A.C4FE 8GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB

G Skill Intl F4-4000C17-16GVKB 16GB RAM的比较

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Apacer Technology 76.D105G.D090B 16GB
RAM Latency Calculator
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最新比较

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内存RAM
Samsung M471A1K43DB1-CTD 8GB
Samsung M471A1K43DB1-CTD 8GB
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G Skill Intl F4-4000C17-16GVKB 16GB
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内存RAM
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内存RAM
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内存RAM
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内存RAM
Hexon Technology Pte Ltd HEXON 1GB
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内存RAM
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内存RAM
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Samsung M378B5273CH0-CH9 4GB
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Shenzhen Technology Co Ltd 8GB
内存RAM