Samsung M471A1K43DB1-CTD 8GB vs Thermaltake Technology Co Ltd R002D408GX2-2666C19D 8GB

总分

Samsung M471A1K43DB1-CTD 8GB

Samsung M471A1K43DB1-CTD 8GB

总分

Thermaltake Technology Co Ltd R002D408GX2-2666C19D 8GB

Thermaltake Technology Co Ltd R002D408GX2-2666C19D 8GB

差异规格评论

差异

Samsung M471A1K43DB1-CTD 8GB

需要考虑的原因
Samsung M471A1K43DB1-CTD 8GB

报告一个错误

更快的写入速度，GB/s

11.8 10.7

测试中的平均数值

Thermaltake Technology Co Ltd R002D408GX2-2666C19D 8GB

需要考虑的原因
Thermaltake Technology Co Ltd R002D408GX2-2666C19D 8GB

报告一个错误

低于PassMark测试中的延时，ns

30 35

左右 -17% 更低的延时
更快的读取速度，GB/s

15.9 15.7

测试中的平均数值

规格

完整的技术规格清单

Samsung M471A1K43DB1-CTD 8GB

Thermaltake Technology Co Ltd R002D408GX2-2666C19D 8GB

主要特点

存储器类型

DDR4 DDR4
PassMark中的延时，ns

35 30
读取速度，GB/s

15.7 15.9
写入速度，GB/s

11.8 10.7
内存带宽，mbps

21300 21300

Other

描述

PC4-21300, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 PC4-21300, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20
时序/时钟速度

17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz 17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
排名PassMark (越多越好)

2767 2846

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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