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Samsung M471A1K43DB1-CWE 8GB
Crucial Technology CT16G4SFRA32A.C16FJ 16GB

Samsung M471A1K43DB1-CWE 8GB vs Crucial Technology CT16G4SFRA32A.C16FJ 16GB

总分
star star star star star
Samsung M471A1K43DB1-CWE 8GB

Samsung M471A1K43DB1-CWE 8GB

总分
star star star star star
Crucial Technology CT16G4SFRA32A.C16FJ 16GB

Crucial Technology CT16G4SFRA32A.C16FJ 16GB

差异 规格 评论

差异

Samsung M471A1K43DB1-CWE 8GB 需要考虑的原因
Samsung M471A1K43DB1-CWE 8GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    33 left arrow 42
    左右 21% 更低的延时
  • 更快的读取速度，GB/s
    16.1 left arrow 15.2
    测试中的平均数值
  • 更快的写入速度，GB/s
    13.0 left arrow 9.5
    测试中的平均数值
Crucial Technology CT16G4SFRA32A.C16FJ 16GB 需要考虑的原因
Crucial Technology CT16G4SFRA32A.C16FJ 16GB
报告一个错误

规格

完整的技术规格清单
Samsung M471A1K43DB1-CWE 8GB
Crucial Technology CT16G4SFRA32A.C16FJ 16GB
主要特点
  • 存储器类型
    DDR4 left arrow DDR4
  • PassMark中的延时，ns
    33 left arrow 42
  • 读取速度，GB/s
    16.1 left arrow 15.2
  • 写入速度，GB/s
    13.0 left arrow 9.5
  • 内存带宽，mbps
    25600 left arrow 25600
Other
  • 描述
    PC4-25600, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21 22 24 left arrow PC4-25600, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 26 28
  • 时序/时钟速度
    20-20-20, 22-22-22, 24-24-24 / 3200 MHz left arrow 20-20-20, 22-22-22, 24-24-24 / 3200 MHz
  • 排名PassMark (越多越好)
    2987 left arrow 2597

Samsung M471A1K43DB1-CWE 8GB RAM的比较

Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
Crucial Technology BLS4G4D240FSE.8FBD 4GB

Crucial Technology CT16G4SFRA32A.C16FJ 16GB RAM的比较

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Crucial Technology BLS4G4D240FSE.8FBD 4GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
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最新比较

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Smart Modular SH564128FH8NZQNSCG 4GB
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内存RAM
Samsung M471A1K43DB1-CWE 8GB
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Crucial Technology CT16G4SFRA32A.C16FJ 16GB
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内存RAM
Kingston 9905403-447.A00LF 4GB
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Micron Technology 8ATF2G64HZ-3G2E2 16GB
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Crucial Technology CT8G4DFD8213.C16FDD2 8GB
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Hynix Semiconductor (Hyundai Electronics) HMT125S6AFP8C-G7 2GB
Hynix Semiconductor (Hyundai Electronics) HMT125S6AFP8C
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Kingston MSI24D4S7S8MH-8 8GB
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Team Group Inc. Team-Elite-1333 4GB
Team Group Inc. Team-Elite-1333 4GB
G Skill Intl F4-2800C15-4GVRB 4GB
G Skill Intl F4-2800C15-4GVRB 4GB
内存RAM
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
Hynix Semiconductor (Hyundai Electronics) GKE160SO10240
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Crucial Technology CB8GU2666.C8ET 8GB
内存RAM
SK Hynix HMT41GU7BFR8A-PB 8GB
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V-GEN D4H8GL26A8TS6 8GB
内存RAM
Crucial Technology CT51264AC800.C16FC 4GB
Crucial Technology CT51264AC800.C16FC 4GB
SK Hynix HMA851S6DJR6N-VK 4GB
SK Hynix HMA851S6DJR6N-VK 4GB
内存RAM
Crucial Technology BLS4G4D240FSE.8FBD 4GB
Crucial Technology BLS4G4D240FSE.8FBD 4GB
G Skill Intl F4-2400C17-8GNT 8GB
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内存RAM
Kingston KP4T2F-PSB 4GB
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内存RAM
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Kingston ACR256X64D3S1333C9 2GB
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Nanya Technology NT8GA64D88AX3S-HR 8GB
内存RAM
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Corsair CM2X1024-8500C5D 1GB
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GIGA - BYTE Technology Co Ltd AR32C16S8K2HU416R 8GB
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