Samsung M471A2K43EB1-CWE 16GB vs Micron Technology MTA8ATF1G64HZ-2G3B1 16GB

总分

Samsung M471A2K43EB1-CWE 16GB

Samsung M471A2K43EB1-CWE 16GB

总分

Micron Technology MTA8ATF1G64HZ-2G3B1 16GB

Micron Technology MTA8ATF1G64HZ-2G3B1 16GB

差异规格评论

差异

Samsung M471A2K43EB1-CWE 16GB

需要考虑的原因
Samsung M471A2K43EB1-CWE 16GB

报告一个错误

更快的读取速度，GB/s

15.8 12.2

测试中的平均数值
更快的写入速度，GB/s

13.8 9.3

测试中的平均数值
更高的内存带宽，mbps

25600 19200

左右 1.33% 更高的带宽

Micron Technology MTA8ATF1G64HZ-2G3B1 16GB

需要考虑的原因
Micron Technology MTA8ATF1G64HZ-2G3B1 16GB

报告一个错误

低于PassMark测试中的延时，ns

28 55

左右 -96% 更低的延时

规格

完整的技术规格清单

Samsung M471A2K43EB1-CWE 16GB

Micron Technology MTA8ATF1G64HZ-2G3B1 16GB

主要特点

存储器类型

DDR4 DDR4
PassMark中的延时，ns

55 28
读取速度，GB/s

15.8 12.2
写入速度，GB/s

13.8 9.3
内存带宽，mbps

25600 19200

Other

描述

PC4-25600, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21 22 24 PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18
时序/时钟速度

20-20-20, 22-22-22, 24-24-24 / 3200 MHz 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
排名PassMark (越多越好)

2701 2382

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

最新比较

Kingston 9905471-002.A00LF 2GB

Kingston 9905471-002.A00LF 2GB

G Skill Intl F4-3200C15-16GTZKW 16GB

G Skill Intl F4-3200C15-16GTZKW 16GB

SK Hynix HMT31GR7CFR4C-PB 8GB

SK Hynix HMT31GR7CFR4C-PB 8GB

Samsung M378A1K43DB2-CVF 8GB

Samsung M378A1K43DB2-CVF 8GB

Kingston 99U5474-023.A00LF 4GB

Kingston 99U5474-023.A00LF 4GB

Corsair CMT64GX4M4C3200C16 16GB

Corsair CMT64GX4M4C3200C16 16GB

Crucial Technology BLT4G3D1337DT1TX0. 4GB

Crucial Technology BLT4G3D1337DT1TX0. 4GB

Kingston KF2933C17S4/32G 32GB

Kingston KF2933C17S4/32G 32GB

takeMS International AG TMS2GB264D082-805G 2GB

takeMS International AG TMS2GB264D082-805G 2GB

Kingston 9905678-138.A00G 8GB

Kingston 9905678-138.A00G 8GB

Samsung M393B1K70QB0-CK0 8GB

Samsung M393B1K70QB0-CK0 8GB

A-DATA Technology AM2P26KC8T1-BXRS 8GB

A-DATA Technology AM2P26KC8T1-BXRS 8GB

Golden Empire 1GB DDR2 800 CAS=4 1GB

Golden Empire 1GB DDR2 800 CAS=4 1GB

G Skill Intl F4-3200C16-4GVK 4GB

G Skill Intl F4-3200C16-4GVK 4GB

SK Hynix DDR2 800 2G 2GB

SK Hynix DDR2 800 2G 2GB

G Skill Intl F4-3733C17-16GTZR 16GB

G Skill Intl F4-3733C17-16GTZR 16GB

Samsung M3 78T3354BZ0-CCC 256MB

Samsung M3 78T3354BZ0-CCC 256MB

Crucial Technology BLS4G4D26BFSE.8FB 4GB

Crucial Technology BLS4G4D26BFSE.8FB 4GB

Kingston 99U5474-037.A00LF 4GB

Kingston 99U5474-037.A00LF 4GB

Crucial Technology C 8GB

Crucial Technology C 8GB

Samsung M393B1K70QB0-CK0 8GB

Samsung M393B1K70QB0-CK0 8GB

Kingston X6TCK6-MIE 32GB

Kingston X6TCK6-MIE 32GB

Samsung M395T2863QZ4-CF76 1GB

Samsung M395T2863QZ4-CF76 1GB

Kingston X3XCFP-HYA 8GB

Kingston X3XCFP-HYA 8GB

Samsung M471B5773DH0-CK0 2GB

Samsung M471B5773DH0-CK0 2GB

Hynix Semiconductor (Hyundai Electronics) HMA82GR7MFR4N-UH 16GB

Hynix Semiconductor (Hyundai Electronics) HMA82GR7MFR4N

Nanya Technology M2Y51264TU88A2B-3C 512MB

Nanya Technology M2Y51264TU88A2B-3C 512MB

Kingston 9905598-044.A00G 16GB

Kingston 9905598-044.A00G 16GB