Samsung M471A5143DB0-CPB 4GB vs SK Hynix HMA82GS6DJR8N-XN 16GB

总分

Samsung M471A5143DB0-CPB 4GB

Samsung M471A5143DB0-CPB 4GB

总分

SK Hynix HMA82GS6DJR8N-XN 16GB

SK Hynix HMA82GS6DJR8N-XN 16GB

差异规格评论

差异

Samsung M471A5143DB0-CPB 4GB

需要考虑的原因
Samsung M471A5143DB0-CPB 4GB

报告一个错误

SK Hynix HMA82GS6DJR8N-XN 16GB

需要考虑的原因
SK Hynix HMA82GS6DJR8N-XN 16GB

报告一个错误

低于PassMark测试中的延时，ns

37 39

左右 -5% 更低的延时
更快的读取速度，GB/s

15.3 14.1

测试中的平均数值
更快的写入速度，GB/s

12.9 10.7

测试中的平均数值
更高的内存带宽，mbps

25600 17000

左右 1.51 更高的带宽

规格

完整的技术规格清单

Samsung M471A5143DB0-CPB 4GB

SK Hynix HMA82GS6DJR8N-XN 16GB

主要特点

存储器类型

DDR4 DDR4
PassMark中的延时，ns

39 37
读取速度，GB/s

14.1 15.3
写入速度，GB/s

10.7 12.9
内存带宽，mbps

17000 25600

Other

描述

PC4-17000, 1.2V, CAS Supported: 10 11 12 13 14 15 16 PC4-25600, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21 22 24
时序/时钟速度

14-14-14, 15-15-15, 16-16-16 / 2133 MHz 20-20-20, 22-22-22, 24-24-24 / 3200 MHz
排名PassMark (越多越好)

2183 2973

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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