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Samsung M471A5244BB0-CRC 4GB
Corsair CMSX16GX4M2A2400C16 8GB

Samsung M471A5244BB0-CRC 4GB vs Corsair CMSX16GX4M2A2400C16 8GB

总分
star star star star star
Samsung M471A5244BB0-CRC 4GB

Samsung M471A5244BB0-CRC 4GB

总分
star star star star star
Corsair CMSX16GX4M2A2400C16 8GB

Corsair CMSX16GX4M2A2400C16 8GB

差异 规格 评论

差异

Samsung M471A5244BB0-CRC 4GB 需要考虑的原因
Samsung M471A5244BB0-CRC 4GB
报告一个错误
Corsair CMSX16GX4M2A2400C16 8GB 需要考虑的原因
Corsair CMSX16GX4M2A2400C16 8GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    34 left arrow 38
    左右 -12% 更低的延时
  • 更快的读取速度，GB/s
    15.4 left arrow 14
    测试中的平均数值
  • 更快的写入速度，GB/s
    12.0 left arrow 10.4
    测试中的平均数值

规格

完整的技术规格清单
Samsung M471A5244BB0-CRC 4GB
Corsair CMSX16GX4M2A2400C16 8GB
主要特点
  • 存储器类型
    DDR4 left arrow DDR4
  • PassMark中的延时，ns
    38 left arrow 34
  • 读取速度，GB/s
    14.0 left arrow 15.4
  • 写入速度，GB/s
    10.4 left arrow 12.0
  • 内存带宽，mbps
    19200 left arrow 19200
Other
  • 描述
    PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 left arrow PC4-19200, 1.2V, CAS Supported: 11 12 13 14 15 16 18
  • 时序/时钟速度
    15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz left arrow 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
  • 排名PassMark (越多越好)
    2055 left arrow 2791

Samsung M471A5244BB0-CRC 4GB RAM的比较

Crucial Technology BLS4G4D240FSE.8FBD 4GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB

Corsair CMSX16GX4M2A2400C16 8GB RAM的比较

Patriot Memory (PDP Systems) 1866 CL9 Series 4GB
Crucial Technology BLS4G4D240FSE.8FBD 4GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
RAM 2

最新比较

Samsung M471A5244BB0-CRC 4GB
Samsung M471A5244BB0-CRC 4GB
Corsair CMSX16GX4M2A2400C16 8GB
Corsair CMSX16GX4M2A2400C16 8GB
内存RAM
Kingston 99U5474-028.A00LF 4GB
Kingston 99U5474-028.A00LF 4GB
Samsung M393A2G40DB0-CPB 16GB
Samsung M393A2G40DB0-CPB 16GB
内存RAM
Elpida EBJ17RG4EFWA-DJ-F 16GB
Elpida EBJ17RG4EFWA-DJ-F 16GB
G Skill Intl F4-4133C19-8GTZSWF 8GB
G Skill Intl F4-4133C19-8GTZSWF 8GB
内存RAM
Transcend Information JM2666HSB-16G 16GB
Transcend Information JM2666HSB-16G 16GB
Transcend Information JM2666HSE-16G 16GB
Transcend Information JM2666HSE-16G 16GB
内存RAM
Hexon Technology Pte Ltd HEXON 1GB
Hexon Technology Pte Ltd HEXON 1GB
Crucial Technology CT16G4DFD832A.C16FP 16GB
Crucial Technology CT16G4DFD832A.C16FP 16GB
内存RAM
Golden Empire 1GB DDR2 800 CAS=4 1GB
Golden Empire 1GB DDR2 800 CAS=4 1GB
Corsair CMD32GX4M4B3466C16 8GB
Corsair CMD32GX4M4B3466C16 8GB
内存RAM
Kingston KVR533D2N4 512MB
Kingston KVR533D2N4 512MB
Kingston 9905630-066.A00G 16GB
Kingston 9905630-066.A00G 16GB
内存RAM
Samsung M3 78T3354BZ0-CCC 256MB
Samsung M3 78T3354BZ0-CCC 256MB
Kingmax Semiconductor GSAG42F-18---------- 8GB
Kingmax Semiconductor GSAG42F-18---------- 8GB
内存RAM
G Skill Intl F5-6400J3239G16G 16GB
G Skill Intl F5-6400J3239G16G 16GB
Chun Well Technology Holding Limited CL19-19-19 D4-2666 16GB
Chun Well Technology Holding Limited CL19-19-19 D4-2666
内存RAM
Samsung M4 70T2953EZ3-CE6 1GB
Samsung M4 70T2953EZ3-CE6 1GB
Apacer Technology 78.BAGM6.40C0B 4GB
Apacer Technology 78.BAGM6.40C0B 4GB
内存RAM
Kingston KHX1866C9D3/8GX 8GB
Kingston KHX1866C9D3/8GX 8GB
A-DATA Technology AO2P24HCST2-BTCS 16GB
A-DATA Technology AO2P24HCST2-BTCS 16GB
内存RAM
Kingston 9905403-011.A03LF 2GB
Kingston 9905403-011.A03LF 2GB
Crucial Technology BLS4G4D240FSB.8FBD 4GB
Crucial Technology BLS4G4D240FSB.8FBD 4GB
内存RAM
TwinMOS 8DHE3MN8-HATP 2GB
TwinMOS 8DHE3MN8-HATP 2GB
Crucial Technology CT4G4SFS8266.M8FE 4GB
Crucial Technology CT4G4SFS8266.M8FE 4GB
内存RAM
SK Hynix HMT151R7TFR4C-H9 4GB
SK Hynix HMT151R7TFR4C-H9 4GB
Gold Key Technology Co Ltd NMUD416E86-3200D 16GB
Gold Key Technology Co Ltd NMUD416E86-3200D 16GB
内存RAM