Samsung M471A5244CB0-CTD 4GB vs Patriot Memory (PDP Systems) PSD44G240081S 4GB

总分

Samsung M471A5244CB0-CTD 4GB

Samsung M471A5244CB0-CTD 4GB

总分

Patriot Memory (PDP Systems) PSD44G240081S 4GB

Patriot Memory (PDP Systems) PSD44G240081S 4GB

差异规格评论

差异

Samsung M471A5244CB0-CTD 4GB

需要考虑的原因
Samsung M471A5244CB0-CTD 4GB

报告一个错误

低于PassMark测试中的延时，ns

39 98

左右 60% 更低的延时
更快的读取速度，GB/s

15.5 14.8

测试中的平均数值
更快的写入速度，GB/s

11.5 7.0

测试中的平均数值
更高的内存带宽，mbps

21300 19200

左右 1.11% 更高的带宽

Patriot Memory (PDP Systems) PSD44G240081S 4GB

需要考虑的原因
Patriot Memory (PDP Systems) PSD44G240081S 4GB

报告一个错误

规格

完整的技术规格清单

Samsung M471A5244CB0-CTD 4GB

Patriot Memory (PDP Systems) PSD44G240081S 4GB

主要特点

存储器类型

DDR4 DDR4
PassMark中的延时，ns

39 98
读取速度，GB/s

15.5 14.8
写入速度，GB/s

11.5 7.0
内存带宽，mbps

21300 19200

Other

描述

PC4-21300, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18
时序/时钟速度

17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
排名PassMark (越多越好)

2264 1447

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

最新比较

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Ramaxel Technology RMT3020EC58E9F1333 4GB

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SK Hynix HYMP112S64CP6-S6 1GB

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STEC (Silicon Tech) S1024R3NN2QK-I 1GB

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A-DATA Technology ADOVE1A0834E 1GB

SK Hynix HMA81GS6CJR8N-XN 8GB

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Kingston 99U5471-056.A00LF 8GB

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Crucial Technology CT16G4SFD8266.C16FE 16GB

Crucial Technology CT16G4SFD8266.C16FE 16GB

A-DATA Technology AM2U16BC4P2-B05B 4GB

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MemxPro Inc. D4S8GHIOFFC 8GB

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Kingston 9905744-035.A00G 16GB

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