Samsung M471A5244CB0-CWE 4GB vs Corsair CMK16GX4M2D3600C18 8GB

总分

Samsung M471A5244CB0-CWE 4GB

Samsung M471A5244CB0-CWE 4GB

总分

Corsair CMK16GX4M2D3600C18 8GB

Corsair CMK16GX4M2D3600C18 8GB

差异规格评论

差异

Samsung M471A5244CB0-CWE 4GB

需要考虑的原因
Samsung M471A5244CB0-CWE 4GB

报告一个错误

更高的内存带宽，mbps

25600 17000

左右 1.51% 更高的带宽

Corsair CMK16GX4M2D3600C18 8GB

需要考虑的原因
Corsair CMK16GX4M2D3600C18 8GB

报告一个错误

低于PassMark测试中的延时，ns

30 38

左右 -27% 更低的延时
更快的读取速度，GB/s

17.8 15.5

测试中的平均数值
更快的写入速度，GB/s

14.8 12.0

测试中的平均数值

规格

完整的技术规格清单

Samsung M471A5244CB0-CWE 4GB

Corsair CMK16GX4M2D3600C18 8GB

主要特点

存储器类型

DDR4 DDR4
PassMark中的延时，ns

38 30
读取速度，GB/s

15.5 17.8
写入速度，GB/s

12.0 14.8
内存带宽，mbps

25600 17000

Other

描述

PC4-25600, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21 22 24 PC4-17000, 1.2V, CAS Supported: 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24
时序/时钟速度

20-20-20, 22-22-22, 24-24-24 / 3200 MHz 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)

2283 3458

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

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Absolute Latency

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RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

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Kingston KHX3600C18D4/32GX 32GB

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G Skill Intl F5-6400J3239G16G 16GB

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AMD AE34G1601U1 4GB

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Avant Technology F6451U64F9333G 4GB

Crucial Technology CT4G4DFS824A.C8FBD2 4GB

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STEC (Silicon Tech) S1024R3NN2QK-I 1GB

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Kingston 9905403-515.A00LF 8GB

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SK Hynix HMT325S6CFR8C-H9 2GB

Kingston 9905678-024.A00G 4GB

Kingston 9905678-024.A00G 4GB