Samsung M471A5244CB0-CWE 4GB vs PNY Electronics 4GBH2X02E99927-16- 4GB

总分

Samsung M471A5244CB0-CWE 4GB

Samsung M471A5244CB0-CWE 4GB

总分

PNY Electronics 4GBH2X02E99927-16- 4GB

PNY Electronics 4GBH2X02E99927-16- 4GB

差异规格评论

差异

Samsung M471A5244CB0-CWE 4GB

需要考虑的原因
Samsung M471A5244CB0-CWE 4GB

报告一个错误

更快的读取速度，GB/s

15.5 14

测试中的平均数值
更快的写入速度，GB/s

12.0 8.7

测试中的平均数值
更高的内存带宽，mbps

25600 10600

左右 2.42% 更高的带宽

PNY Electronics 4GBH2X02E99927-16- 4GB

需要考虑的原因
PNY Electronics 4GBH2X02E99927-16- 4GB

报告一个错误

低于PassMark测试中的延时，ns

25 38

左右 -52% 更低的延时

规格

完整的技术规格清单

Samsung M471A5244CB0-CWE 4GB

PNY Electronics 4GBH2X02E99927-16- 4GB

主要特点

存储器类型

DDR4 DDR3
PassMark中的延时，ns

38 25
读取速度，GB/s

15.5 14.0
写入速度，GB/s

12.0 8.7
内存带宽，mbps

25600 10600

Other

描述

PC4-25600, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21 22 24 PC3-10600, 1.5V, CAS Supported: 6 7 8 9
时序/时钟速度

20-20-20, 22-22-22, 24-24-24 / 3200 MHz 7-7-7-20 / 1333 MHz
排名PassMark (越多越好)

2283 2373

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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