Samsung M471A5644EB0-CPB 2GB vs Kingston ACR24D4S7S8MB-8 8GB

总分

Samsung M471A5644EB0-CPB 2GB

Samsung M471A5644EB0-CPB 2GB

总分

Kingston ACR24D4S7S8MB-8 8GB

Kingston ACR24D4S7S8MB-8 8GB

差异规格评论

差异

Samsung M471A5644EB0-CPB 2GB

需要考虑的原因
Samsung M471A5644EB0-CPB 2GB

报告一个错误

低于PassMark测试中的延时，ns

28 37

左右 24% 更低的延时

Kingston ACR24D4S7S8MB-8 8GB

需要考虑的原因
Kingston ACR24D4S7S8MB-8 8GB

报告一个错误

更快的读取速度，GB/s

14.1 13.2

测试中的平均数值
更快的写入速度，GB/s

10.8 9.1

测试中的平均数值
更高的内存带宽，mbps

19200 17000

左右 1.13 更高的带宽

规格

完整的技术规格清单

Samsung M471A5644EB0-CPB 2GB

Kingston ACR24D4S7S8MB-8 8GB

主要特点

存储器类型

DDR4 DDR4
PassMark中的延时，ns

28 37
读取速度，GB/s

13.2 14.1
写入速度，GB/s

9.1 10.8
内存带宽，mbps

17000 19200

Other

描述

PC4-17000, 1.2V, CAS Supported: 10 11 12 13 14 15 16 PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21
时序/时钟速度

14-14-14, 15-15-15, 16-16-16 / 2133 MHz 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
排名PassMark (越多越好)

1989 2486

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

最新比较

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takeMS International AG TMS2GB264D082-805G 2GB

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SanMax Technologies Inc. SMD4-E16G48ME-26V 16GB

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Patriot Memory (PDP Systems) 1866 CL9 Series 4GB

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G Skill Intl F4-2666C16-4GRB 4GB

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Micron Technology 8ATF2G64HZ-2G3A1 16GB

Micron Technology 8ATF2G64HZ-2G3A1 16GB