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Samsung M471B1G73DB0-YK0 8GB
Crucial Technology BLS16G4D240FSE.16FAD 16GB

Samsung M471B1G73DB0-YK0 8GB vs Crucial Technology BLS16G4D240FSE.16FAD 16GB

总分
star star star star star
Samsung M471B1G73DB0-YK0 8GB

Samsung M471B1G73DB0-YK0 8GB

总分
star star star star star
Crucial Technology BLS16G4D240FSE.16FAD 16GB

Crucial Technology BLS16G4D240FSE.16FAD 16GB

差异 规格 评论

差异

Samsung M471B1G73DB0-YK0 8GB 需要考虑的原因
Samsung M471B1G73DB0-YK0 8GB
报告一个错误
Crucial Technology BLS16G4D240FSE.16FAD 16GB 需要考虑的原因
Crucial Technology BLS16G4D240FSE.16FAD 16GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    31 left arrow 45
    左右 -45% 更低的延时
  • 更快的读取速度，GB/s
    16.3 left arrow 11.9
    测试中的平均数值
  • 更快的写入速度，GB/s
    11.1 left arrow 8.1
    测试中的平均数值
  • 更高的内存带宽，mbps
    19200 left arrow 12800
    左右 1.5 更高的带宽

规格

完整的技术规格清单
Samsung M471B1G73DB0-YK0 8GB
Crucial Technology BLS16G4D240FSE.16FAD 16GB
主要特点
  • 存储器类型
    DDR3 left arrow DDR4
  • PassMark中的延时，ns
    45 left arrow 31
  • 读取速度，GB/s
    11.9 left arrow 16.3
  • 写入速度，GB/s
    8.1 left arrow 11.1
  • 内存带宽，mbps
    12800 left arrow 19200
Other
  • 描述
    PC3-12800, 1.5V, 1.35V , CAS Supported: 5 6 7 8 9 10 11 left arrow PC4-19200, 1.2V, CAS Supported: 9 10 11 12 13 14 15 16 18 20
  • 时序/时钟速度
    9-9-9-24 / 1600 MHz left arrow 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
  • 排名PassMark (越多越好)
    2077 left arrow 2995

Samsung M471B1G73DB0-YK0 8GB RAM的比较

Crucial Technology CT102464BF160B.C16 8GB
Kingston KTP9W1-MID 16GB

Crucial Technology BLS16G4D240FSE.16FAD 16GB RAM的比较

Corsair CMK64GX4M4K3733C17 16GB
Kingston 9905471-002.A00LF 2GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
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最新比较

Samsung M471B1G73DB0-YK0 8GB
Samsung M471B1G73DB0-YK0 8GB
Crucial Technology BLS16G4D240FSE.16FAD 16GB
Crucial Technology BLS16G4D240FSE.16FAD 16GB
内存RAM
Kingston 99P5471-016.A00LF 8GB
Kingston 99P5471-016.A00LF 8GB
Kingston KHX2400C14S4/8G 8GB
Kingston KHX2400C14S4/8G 8GB
内存RAM
Kingston 9905403-011.A03LF 2GB
Kingston 9905403-011.A03LF 2GB
Apacer Technology 78.C1GQB.4032B 8GB
Apacer Technology 78.C1GQB.4032B 8GB
内存RAM
Kingston KVR16N11/8-SP 8GB
Kingston KVR16N11/8-SP 8GB
Team Group Inc. TEAMGROUP-UD4-2133 8GB
Team Group Inc. TEAMGROUP-UD4-2133 8GB
内存RAM
Samsung 1600 CL10 Series 8GB
Samsung 1600 CL10 Series 8GB
Corsair CMSX32GX4M2A2400C16 16GB
Corsair CMSX32GX4M2A2400C16 16GB
内存RAM
SK Hynix HMT151R7TFR4C-H9 4GB
SK Hynix HMT151R7TFR4C-H9 4GB
Samsung M391A1G43EB1-CRC 8GB
Samsung M391A1G43EB1-CRC 8GB
内存RAM
Apacer Technology 78.01G86.9H50C 1GB
Apacer Technology 78.01G86.9H50C 1GB
Samsung M393A1G43DB1-CRC 8GB
Samsung M393A1G43DB1-CRC 8GB
内存RAM
Kingston 99U5584-001.A00LF 4GB
Kingston 99U5584-001.A00LF 4GB
Hypertec G2RT-4AFT00 16GB
Hypertec G2RT-4AFT00 16GB
内存RAM
SK Hynix HYMP112U64CP8-S5 1GB
SK Hynix HYMP112U64CP8-S5 1GB
SK Hynix HMA82GU6AFR8N-TF 16GB
SK Hynix HMA82GU6AFR8N-TF 16GB
内存RAM
G Skill Intl F3-17000CL11-4GBXL 4GB
G Skill Intl F3-17000CL11-4GBXL 4GB
Corsair CMK8GX4M2B3866C18 4GB
Corsair CMK8GX4M2B3866C18 4GB
内存RAM
Samsung M391B5673EH1-CH9 2GB
Samsung M391B5673EH1-CH9 2GB
Apacer Technology 78.D2GG7.AU30B 16GB
Apacer Technology 78.D2GG7.AU30B 16GB
内存RAM
G Skill Intl F3-2133C9-4GAB 4GB
G Skill Intl F3-2133C9-4GAB 4GB
Micron Technology 16ATF2G64AZ-2G3A1 16GB
Micron Technology 16ATF2G64AZ-2G3A1 16GB
内存RAM
Hynix Semiconductor (Hyundai Electronics) HMT351R7EFR4A-H9 4GB
Hynix Semiconductor (Hyundai Electronics) HMT351R7EFR4A
Hynix Semiconductor (Hyundai Electronics) HMT351S6CFR8A-H9 4GB
Hynix Semiconductor (Hyundai Electronics) HMT351S6CFR8A
内存RAM
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
Hynix Semiconductor (Hyundai Electronics) GKE160SO10240
Micron Technology 8ATF1G64HZ-2G3E2 8GB
Micron Technology 8ATF1G64HZ-2G3E2 8GB
内存RAM