Samsung M471B1G73DB0-YK0 8GB vs SK Hynix HMT351S6EFR8A-PB 4GB

总分

Samsung M471B1G73DB0-YK0 8GB

Samsung M471B1G73DB0-YK0 8GB

总分

SK Hynix HMT351S6EFR8A-PB 4GB

SK Hynix HMT351S6EFR8A-PB 4GB

差异规格评论

差异

Samsung M471B1G73DB0-YK0 8GB

需要考虑的原因
Samsung M471B1G73DB0-YK0 8GB

报告一个错误

低于PassMark测试中的延时，ns

45 46

左右 2% 更低的延时

SK Hynix HMT351S6EFR8A-PB 4GB

需要考虑的原因
SK Hynix HMT351S6EFR8A-PB 4GB

报告一个错误

更快的读取速度，GB/s

12.5 11.9

测试中的平均数值
更快的写入速度，GB/s

9.3 8.1

测试中的平均数值

规格

完整的技术规格清单

Samsung M471B1G73DB0-YK0 8GB

SK Hynix HMT351S6EFR8A-PB 4GB

主要特点

存储器类型

DDR3 DDR3
PassMark中的延时，ns

45 46
读取速度，GB/s

11.9 12.5
写入速度，GB/s

8.1 9.3
内存带宽，mbps

12800 12800

Other

描述

PC3-12800, 1.5V, 1.35V , CAS Supported: 5 6 7 8 9 10 11 PC3-12800, 1.5V, 1.35V , CAS Supported: 5 6 7 8 9 10 11
时序/时钟速度

9-9-9-24 / 1600 MHz 9-9-9-24 / 1600 MHz
排名PassMark (越多越好)

2077 2048

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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Hexon Technology Pte Ltd HEXON 1GB

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Corsair CMK32GX4M2A2666C16 16GB

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Apacer Technology 78.B1GET.AU00C 4GB

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Kingston 9905630-051.A00G 16GB

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Corsair CMK64GX4M4B3200C16 16GB

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Crucial Technology CT16G4SFD824A.M16FH 16GB

Samsung DDR3 8GB 1600MHz 8GB

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Ramos Technology EWB8GB681CA3-16IC 8GB

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Crucial Technology BLS8G4D240FSB.M16FBD 8GB

Crucial Technology BLS8G4D240FSB.M16FBD 8GB