Samsung M471B1G73DB0-YK0 8GB vs UMAX Technology D4-2400-4GB-512X8-L 4GB

总分

Samsung M471B1G73DB0-YK0 8GB

Samsung M471B1G73DB0-YK0 8GB

总分

UMAX Technology D4-2400-4GB-512X8-L 4GB

UMAX Technology D4-2400-4GB-512X8-L 4GB

差异规格评论

差异

Samsung M471B1G73DB0-YK0 8GB

需要考虑的原因
Samsung M471B1G73DB0-YK0 8GB

报告一个错误

低于PassMark测试中的延时，ns

45 64

左右 30% 更低的延时

UMAX Technology D4-2400-4GB-512X8-L 4GB

需要考虑的原因
UMAX Technology D4-2400-4GB-512X8-L 4GB

报告一个错误

更快的读取速度，GB/s

17.1 11.9

测试中的平均数值
更快的写入速度，GB/s

8.3 8.1

测试中的平均数值
更高的内存带宽，mbps

19200 12800

左右 1.5 更高的带宽

规格

完整的技术规格清单

Samsung M471B1G73DB0-YK0 8GB

UMAX Technology D4-2400-4GB-512X8-L 4GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

45 64
读取速度，GB/s

11.9 17.1
写入速度，GB/s

8.1 8.3
内存带宽，mbps

12800 19200

Other

描述

PC3-12800, 1.5V, 1.35V , CAS Supported: 5 6 7 8 9 10 11 PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18
时序/时钟速度

9-9-9-24 / 1600 MHz 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
排名PassMark (越多越好)

2077 1948

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

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Absolute Latency

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RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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Micron Technology 16ATF2G64HZ-2G3B2 16GB

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Micron Technology 8ATF2G64HZ-3G2E2 16GB

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ATP Electronics Inc. X4C16QE8BNRCME-E-LI1 16GB

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AMD R5316G1609U2K 8GB

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Kingston KVR24N17S8/4 4GB

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Samsung M471A2G43AB2-CWE 16GB

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Crucial Technology CT16G4SFD832A.C16FJ 16GB

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Kingston HP26D4U9S1ME-4 4GB

Kingston HP26D4U9S1ME-4 4GB

Samsung M393B1K70CH0-CH9 8GB

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Samsung M471A2K43CB1-CRCR 16GB

Samsung M471A2K43CB1-CRCR 16GB

Corsair CM2X1024-6400C4 1GB

Corsair CM2X1024-6400C4 1GB

Crucial Technology BLS4G4D26BFSC.8FD2 4GB

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Kingston 9965516-112.A00LF 16GB

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Kingston ACR24D4U7S8MB-8 8GB

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Gold Key Technology Co Ltd NMUD480E84-3000D 8GB

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