Samsung M471B1G73QH0-YK0 8GB vs Crucial Technology BLE8G4D40BEEAK.M8FE1 8GB

总分

Samsung M471B1G73QH0-YK0 8GB

Samsung M471B1G73QH0-YK0 8GB

总分

Crucial Technology BLE8G4D40BEEAK.M8FE1 8GB

Crucial Technology BLE8G4D40BEEAK.M8FE1 8GB

差异规格评论

差异

Samsung M471B1G73QH0-YK0 8GB

需要考虑的原因
Samsung M471B1G73QH0-YK0 8GB

报告一个错误

Crucial Technology BLE8G4D40BEEAK.M8FE1 8GB

需要考虑的原因
Crucial Technology BLE8G4D40BEEAK.M8FE1 8GB

报告一个错误

低于PassMark测试中的延时，ns

26 47

左右 -81% 更低的延时
更快的读取速度，GB/s

18.4 11.8

测试中的平均数值
更快的写入速度，GB/s

16.4 8.0

测试中的平均数值
更高的内存带宽，mbps

21300 12800

左右 1.66 更高的带宽

规格

完整的技术规格清单

Samsung M471B1G73QH0-YK0 8GB

Crucial Technology BLE8G4D40BEEAK.M8FE1 8GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

47 26
读取速度，GB/s

11.8 18.4
写入速度，GB/s

8.0 16.4
内存带宽，mbps

12800 21300

Other

描述

PC3-12800, 1.5V, 1.35V , CAS Supported: 5 6 7 8 9 10 11 PC4-21300, 1.2V, CAS Supported: 10 12 13 14 15 16 17 18 19 20
时序/时钟速度

9-9-9-24 / 1600 MHz 17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
排名PassMark (越多越好)

2061 3825

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

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RAM 2

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Kingston MSI26D4S9D8ME-16 16GB

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Micron Technology AFLD48EH1P 8GB

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Golden Empire CL5-5-5DDR2 1GB

Golden Empire CL5-5-5DDR2 1GB

G Skill Intl F4-3200C16-8GRS 8GB

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Kingston 99U5474-028.A00LF 4GB

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Micron Technology 18ADF2G72PZ-2G3B1 16GB

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Kingston ACR256X64D3S1333C9 2GB

Kingston ACR256X64D3S1333C9 2GB

Crucial Technology BLS8G4D240FSE.16FBR2 8GB

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Kingston ACR512X64D3S13C9G 4GB

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