Samsung M471B5173DB0-YK0 4GB vs G Skill Intl F4-3200C16-8GTZKW 8GB

总分

Samsung M471B5173DB0-YK0 4GB

Samsung M471B5173DB0-YK0 4GB

总分

G Skill Intl F4-3200C16-8GTZKW 8GB

G Skill Intl F4-3200C16-8GTZKW 8GB

差异规格评论

差异

Samsung M471B5173DB0-YK0 4GB

需要考虑的原因
Samsung M471B5173DB0-YK0 4GB

报告一个错误

G Skill Intl F4-3200C16-8GTZKW 8GB

需要考虑的原因
G Skill Intl F4-3200C16-8GTZKW 8GB

报告一个错误

低于PassMark测试中的延时，ns

29 45

左右 -55% 更低的延时
更快的读取速度，GB/s

18.5 12

测试中的平均数值
更快的写入速度，GB/s

14.6 7.8

测试中的平均数值
更高的内存带宽，mbps

17000 12800

左右 1.33 更高的带宽

规格

完整的技术规格清单

Samsung M471B5173DB0-YK0 4GB

G Skill Intl F4-3200C16-8GTZKW 8GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

45 29
读取速度，GB/s

12.0 18.5
写入速度，GB/s

7.8 14.6
内存带宽，mbps

12800 17000

Other

描述

PC3-12800, 1.5V, 1.35V , CAS Supported: 5 6 7 8 9 10 11 PC4-17000, 1.2V, CAS Supported: 10 11 12 13 14 15 16
时序/时钟速度

9-9-9-24 / 1600 MHz 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)

1939 3488

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

最新比较

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Corsair CM3X8GA2400C11Y2R 8GB

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Mushkin MR[A/B]4U266GHHF8G 8GB

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Ramaxel Technology RMT3170EB68F9W1600 4GB

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Kingston HX318C10FK/4 4GB

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G Skill Intl F4-4800C18-8GTRS 8GB

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G Skill Intl F5-6400J3239G16G 16GB

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SK Hynix HMT451U7BFR8C-RD 4GB

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Essencore Limited KD4AGS88A-26N1600 16GB

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Gold Key Technology Co Ltd NMUD416E86-3200D 16GB

A-DATA Technology AM2U16BC4P2-B05B 4GB

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Avant Technology J641GU42J7240N3 8GB

Avant Technology J641GU42J7240N3 8GB

Kingston ACR16D3LS1KBG/8G 8GB

Kingston ACR16D3LS1KBG/8G 8GB

Patriot Memory (PDP Systems) PSD416G26662S 16GB

Patriot Memory (PDP Systems) PSD416G26662S 16GB

SK Hynix HMT351U6CFR8C-H9 4GB

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Kingston KHX2133C11D3/4GX 4GB

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Kingston 99U5702-094.A00G 8GB

Kingston 99U5702-094.A00G 8GB

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Nanya Technology M2Y51264TU88B0B-3C 512MB

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V-Color Technology Inc. TL48G32S8RRGB16 8GB