Samsung M471B5173DB0-YK0 4GB vs Kingmax Semiconductor GSLG42F-18---------- 8GB

总分

Samsung M471B5173DB0-YK0 4GB

Samsung M471B5173DB0-YK0 4GB

总分

Kingmax Semiconductor GSLG42F-18---------- 8GB

Kingmax Semiconductor GSLG42F-18---------- 8GB

差异规格评论

差异

Samsung M471B5173DB0-YK0 4GB

需要考虑的原因
Samsung M471B5173DB0-YK0 4GB

报告一个错误

低于PassMark测试中的延时，ns

45 99

左右 55% 更低的延时
更快的写入速度，GB/s

7.8 6.9

测试中的平均数值

Kingmax Semiconductor GSLG42F-18---------- 8GB

需要考虑的原因
Kingmax Semiconductor GSLG42F-18---------- 8GB

报告一个错误

更快的读取速度，GB/s

14.2 12

测试中的平均数值
更高的内存带宽，mbps

19200 12800

左右 1.5 更高的带宽

规格

完整的技术规格清单

Samsung M471B5173DB0-YK0 4GB

Kingmax Semiconductor GSLG42F-18---------- 8GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

45 99
读取速度，GB/s

12.0 14.2
写入速度，GB/s

7.8 6.9
内存带宽，mbps

12800 19200

Other

描述

PC3-12800, 1.5V, 1.35V , CAS Supported: 5 6 7 8 9 10 11 PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21
时序/时钟速度

9-9-9-24 / 1600 MHz 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
排名PassMark (越多越好)

1939 1499

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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Corsair CM4B8G2J2400A14K 8GB

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Corsair CMW16GX4M2C3000C15 8GB

Corsair CMW16GX4M2C3000C15 8GB

A-DATA Technology AD73I1B1672EG 2GB

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G Skill Intl F4-4000C17-16GTRSB 16GB

G Skill Intl F4-4000C17-16GTRSB 16GB

Kingston 99U5584-007.A00LF 4GB

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Avexir Technologies Corporation DDR4-3000 CL15 8GB 8GB

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Unifosa Corporation GU332G0ALEPR8H2C6F 2GB

Unifosa Corporation GU332G0ALEPR8H2C6F 2GB

G Skill Intl F4-2400C16-16GFXR 16GB

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Dust Leopard DDR4-2400 C16 8GB 8GB

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AMD AE34G1601U1 4GB

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Crucial Technology B|B8G4D30BET4K.C8FD 8GB

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Kingston KVR16N11/8-SP 8GB

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Kingston 9905624-013.A00G 8GB

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G Skill Intl F5-6400J3239G16G 16GB

G Skill Intl F5-6400J3239G16G 16GB

Gloway International (HK) STK4U2400D17041C 4GB

Gloway International (HK) STK4U2400D17041C 4GB

SK Hynix HYMP112S64CP6-S6 1GB

SK Hynix HYMP112S64CP6-S6 1GB

Samsung M471A1K43CB1-CRCR 8GB

Samsung M471A1K43CB1-CRCR 8GB

Crucial Technology CT51264BD1339.M16F 4GB

Crucial Technology CT51264BD1339.M16F 4GB

G Skill Intl F4-3733C17-16GTZSW 16GB

G Skill Intl F4-3733C17-16GTZSW 16GB

Samsung M378B5773CH0-CH9 2GB

Samsung M378B5773CH0-CH9 2GB

G Skill Intl F4-2666C19-16GIS 16GB

G Skill Intl F4-2666C19-16GIS 16GB

TwinMOS 8DPT5MK8-TATP 2GB

TwinMOS 8DPT5MK8-TATP 2GB

A-DATA Technology DDR4 4133 2OZ 8GB

A-DATA Technology DDR4 4133 2OZ 8GB